Branz et al., 1994 - Google Patents
Structural relaxation and structural memory at amorphous silicon dangling bondsBranz et al., 1994
- Document ID
- 3759997736074417522
- Author
- Branz H
- Fedders P
- Publication year
- Publication venue
- MRS Online Proceedings Library (OPL)
External Links
Snippet
We examine the energy and time scales of configurational relaxation around the dangling bond defect, D, in hydrogenated Amorphous silicon (a-Si: H). After D captures or emits charge, its bond angle, electron energy eigenvalues and local structural environment all …
- 229910021417 amorphous silicon 0 title abstract description 36
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