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Vidor et al., 2014 - Google Patents

Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics

Vidor et al., 2014

Document ID
3718439329530884861
Author
Vidor F
Wirth G
Hilleringmann U
Publication year
Publication venue
Microelectronics Reliability

External Links

Snippet

A bottom-gate/top-drain/source contact ZnO nanoparticle thin-film transistor was fabricated using a low temperature annealing process (150° C) suitable for flexible electronics. Additionally, a high-k resin filled with TiO 2 nanoparticles was used as gate dielectric. After …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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