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Duan et al., 2021 - Google Patents

Complete accumulation lateral double-diffused MOSFET with low ON-resistance applying floating buried layer

Duan et al., 2021

Document ID
2818370196576002076
Author
Duan B
Xing L
Wang Y
Yang Y
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

A novel complete accumulation lateral double-diffused MOSFET with floating buried layers (CA-FBL LDMOS) is proposed to reduce the and improve the breakdown voltage (BV) synchronously. The CA-FBL LDMOS is characterized by n-type floating buried layers (FBLs) …
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