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Sera et al., 1990 - Google Patents

Excimer‐laser doping into Si thin films

Sera et al., 1990

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Document ID
18403059374973214261
Author
Sera K
Okumura F
Kaneko S
Itoh S
Hotta K
Hoshino H
Publication year
Publication venue
Journal of applied physics

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Snippet

The fabrication of n+ and p+ silicon thin film by using a combination of ''spin‐on‐glass''and XeCl excimer‐laser doping is described. The doping can be achieved by rapid dopant atom diffusion into molten silicon from a spin‐coated film containing the dopant. This technology …
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    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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