[go: up one dir, main page]

Chen et al., 2011 - Google Patents

Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte

Chen et al., 2011

Document ID
18271682489660870727
Author
Chen S
Zhang S
Publication year
Publication venue
Analytical chemistry

External Links

Snippet

Electric response to pH variations is employed to investigate Si nanoribbon field-effect transistors (SiNRFETs) operating in electrolyte with different gate configurations. For devices with a conducting gate electrode for direct metal–electrolyte contact, a well-defined …
Continue reading at pubs.acs.org (other versions)

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327Biochemical electrodes electrical and mechanical details of in vitro measurements
    • G01N27/3271Amperometric enzyme electrodes for analytes in body fluids, e.g. glucose in blood
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by the preceding groups
    • G01N33/48Investigating or analysing materials by specific methods not covered by the preceding groups biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53Immunoassay; Biospecific binding assay
    • G01N33/543Immunoassay; Biospecific binding assay with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366Apparatus specially adapted for solid-phase testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/447Systems using electrophoresis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/22Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating capacitance

Similar Documents

Publication Publication Date Title
Zhang et al. Sweat biomarker sensor incorporating picowatt, three-dimensional extended metal gate ion sensitive field effect transistors
Macchia et al. About the amplification factors in organic bioelectronic sensors
Sheibani et al. Extended gate field-effect-transistor for sensing cortisol stress hormone
Zhang et al. High‐performance dopamine sensors based on whole‐graphene solution‐gated transistors
Reddy Jr et al. High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing
Knopfmacher et al. Nernst limit in dual-gated Si-nanowire FET sensors
Nair et al. Screening-limited response of nanobiosensors
Elfström et al. Silicon nanoribbons for electrical detection of biomolecules
Wipf et al. Selective sodium sensing with gold-coated silicon nanowire field-effect transistors in a differential setup
Rigante et al. Sensing with advanced computing technology: Fin field-effect transistors with high-k gate stack on bulk silicon
Chen et al. Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte
Ma et al. Recent advances in ion‐sensitive field‐effect transistors for biosensing applications
Xu et al. Optimization of CMOS-ISFET-based biomolecular sensing: analysis and demonstration in DNA detection
Wu et al. Experimental study of the detection limit in dual-gate biosensors using ultrathin silicon transistors
Kwon et al. Nanoscale FET-based transduction toward sensitive extended-gate biosensors
Go et al. Coupled heterogeneous nanowire–nanoplate planar transistor sensors for giant (> 10 V/pH) Nernst response
Bhattacharyya et al. Electrostatically governed debye screening length at the solution-solid interface for biosensing applications
Tarasov et al. Gold-coated graphene field-effect transistors for quantitative analysis of protein–antibody interactions
CN104838249A (en) Biosensor apparatus and methods comprising localized desalting systems
Livi et al. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications
Suryaganesh et al. Advanced FET-based biosensors—A detailed review
Chen et al. Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
Rollo et al. High aspect ratio fin-ion sensitive field effect transistor: Compromises toward better electrochemical biosensing
Nguyen et al. Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing
Jeon et al. Ultrasensitive coplanar dual-gate ISFETs for point-of-care biomedical applications