[go: up one dir, main page]

Knechtel, 2006 - Google Patents

Wafer bonding technologies in industrial MEMS processing-potentials and challenges

Knechtel, 2006

Document ID
18199362571875312836
Author
Knechtel R
Publication year
Publication venue
ECS Transactions

External Links

Snippet

This paper will give an overview of the use of wafer bonding technologies, in particular, semiconductor direct bonding, glass frit bonding and anodic bonding, in the manufacture of MEMS devices. The potential of these processes is illustrated, as well as the challenges of …
Continue reading at iopscience.iop.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing micro-systems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373

Similar Documents

Publication Publication Date Title
US6610582B1 (en) Field-assisted fusion bonding
US20080237823A1 (en) Aluminum Based Bonding of Semiconductor Wafers
US20150329351A1 (en) Vacuum Sealed MEMS and CMOS Package
US8481365B2 (en) MEMS devices
US20100181676A1 (en) Substrate bonding with metal germanium silicon material
CN101171665A (en) Method for fabricating AI/GE bonds in a wafer packaging environment and products produced thereby
TW201542309A (en) Process for the eutectic bonding of two carrier devices
US9761557B2 (en) CMOS-MEMS integration by sequential bonding method
US7288464B2 (en) MEMS packaging structure and methods
US20060234412A1 (en) MEMS release methods
CN107021448A (en) CMOS MEMS structures
JP6281883B2 (en) Package formation method
Cunningham et al. Wafer bonding
KR102265047B1 (en) Structure for device with integrated microelectromechanical systems
US20070166958A1 (en) Method of wafer level packaging and cutting
Knechtel Wafer bonding technologies in industrial MEMS processing-potentials and challenges
Yufeng et al. MEMS vacuum packaging technology and applications
Gao et al. Patterned Al-Ge wafer bonding for reducing in-process side leakage of eutectic
Chang et al. High hermetic performance of glass frit for MEMS package
KR100418241B1 (en) Reversible Seal Package for Micro Electro Mechanical Systems
Lemoine et al. MEMS wafer-level vacuum packaging with transverse interconnects for CMOS integration
Pelzer et al. Advanced low temperature bonding technologies
Haubold et al. Low temperature wafer bonding technologies
Knechtel Aspects of bonding processed CMOS wafers
Messana et al. Hermetic Packaging for Resonant MEMS