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Huang et al., 2008 - Google Patents

High sensitivity pH sensor using Al X Ga 1-XN/GaN HEMT heterostructure design

Huang et al., 2008

Document ID
18157570018006949527
Author
Huang H
Lin C
Chiu H
Publication year
Publication venue
2008 IEEE International Conference on Electron Devices and Solid-State Circuits

External Links

Snippet

Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al 0.3 Ga 0.7 N has the excellent performance among Al 0.17 Ga 0.83 N and Al 0.25 Ga 0.75 N …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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