Laskar et al., 2002 - Google Patents
Advanced system-on-Package RF front-ends for emerging wireless communicationsLaskar et al., 2002
View PDF- Document ID
- 12988595442534267368
- Author
- Laskar J
- Tentzeris M
- Lim K
- Pinel S
- Davis M
- Rhagavan A
- Maeng M
- Yoon S
- Tummala R
- Publication year
- Publication venue
- Proc. 2002 Asian-Pacific Microwave Symposium
External Links
Snippet
System-on-Package (SOP) is getting more attention in the RF area and is being applied to RF functional blocks and the front-end modules to achieve lower cost, improved performance, and increased design flexibility. In this paper, we present recent developments …
- 230000001629 suppression 0 abstract description 11
Classifications
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1408—Balanced arrangements with diodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lim et al. | RF-system-on-package (SOP) for wireless communications | |
| Tummala et al. | Gigabit wireless: System-on-a-package technology | |
| Laskin et al. | A 95GHz receiver with fundamental-frequency VCO and static frequency divider in 65nm digital CMOS | |
| US7535080B2 (en) | Reducing parasitic mutual capacitances | |
| Huang et al. | A 131 GHz push-push VCO in 90-nm CMOS technology | |
| Floyd | V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators | |
| Laskin et al. | 80/160-GHz transceiver and 140-GHz amplifier in SiGe technology | |
| Wang et al. | MMICs in the millimeter-wave regime | |
| El-Gamal et al. | Very low-voltage (0.8 V) CMOS receiver frontend for 5 GHz RF applications | |
| Powell et al. | SiGe receiver front ends for millimeter-wave passive imaging | |
| Lin et al. | A 23–37 GHz miniature MMIC subharmonic mixer | |
| Ryckaert et al. | Single-package 5GHz WLAN RF module with embedded patch antenna and 20dBm power amplifier | |
| Sarkar et al. | Si-based 60GHz 2X subharmonic mixer for multi-Gigabit wireless personal area network application | |
| Reynolds et al. | Progress toward a low-cost millimeter-wave silicon radio | |
| Imbornone et al. | Fully differential dual-band image reject receiver in SiGe BiCMOS | |
| Laskar et al. | Advanced system-on-Package RF front-ends for emerging wireless communications | |
| Ergintav et al. | An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology | |
| Ta et al. | Issues in the Implementation of a 60GHz Transceiver on CMOS | |
| Amendola et al. | SiGe BiCMOS building blocks for E-and D-band backhauling front-ends | |
| Somesanu et al. | A highly compact, 16.8 dBm Pgat Ka-band power amplifier in 250 nm SiGe: C BiCMOS | |
| Lee et al. | A low power CMOS single-chip receiver and system-on-package for 60GHz mobile applications | |
| Chaturvedi et al. | Millimeter-wave active bandpass filters | |
| Kim et al. | An LTCC power amplifier module integrated with a SAW duplexer | |
| Wu et al. | High performance and compact balanced-filter design for WIMAX front-end modules (FEM) using LCP-based organic substrates | |
| Laskar et al. | Compact System-on-Package (SOP) Architectures for low cost RF Front-end modules |