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Choi et al., 2018 - Google Patents

Content addressable memory based binarized neural network accelerator using time-domain signal processing

Choi et al., 2018

Document ID
11889892835725128755
Author
Choi W
Jeong K
Choi K
Lee K
Park J
Publication year
Publication venue
Proceedings of the 55th Annual Design Automation Conference

External Links

Snippet

Binarized neural network (BNN) is one of the most promising solution for low-cost convolutional neural network acceleration. Since BNN is based on binarized bit-level operations, there exist great opportunities to reduce power-hungry data transfers and …
Continue reading at dl.acm.org (other versions)

Classifications

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    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
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    • G—PHYSICS
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    • G06N3/00—Computer systems based on biological models
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    • G06—COMPUTING; CALCULATING; COUNTING
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    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
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    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
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    • G11—INFORMATION STORAGE
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    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
    • G—PHYSICS
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    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
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