Bugajski et al., 2006 - Google Patents
Thermoreflectance study of facet heating in semiconductor lasersBugajski et al., 2006
- Document ID
- 11882723137996996388
- Author
- Bugajski M
- Piwoński T
- Wawer D
- Ochalski T
- Deichsel E
- Unger P
- Corbett B
- Publication year
- Publication venue
- Materials Science in Semiconductor Processing
External Links
Snippet
We have developed new technique to monitor the facet heating in semiconductor lasers and to correlate these measurements with device performance and reliability. The method is based on thermoreflectance (TR), which is a modulation technique relaying on periodic facet …
- 239000004065 semiconductor 0 title abstract description 14
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/396—Type of laser source
- G01N2021/399—Diode laser
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Cooling arrangements
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using change of colour or translucency
- G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using change of colour or translucency using change in reflectance
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING STIMULATED EMISSION
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical means
- G01B11/02—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical means for measuring length, width or thickness for measuring thickness, e.g. of sheet material of coating
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pierścińska | Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers | |
| Farzaneh et al. | CCD-based thermoreflectance microscopy: principles and applications | |
| US8362431B2 (en) | Methods of thermoreflectance thermography | |
| Bugajski et al. | Thermoreflectance study of facet heating in semiconductor lasers | |
| Pierścińska et al. | CCD thermoreflectance spectroscopy as a tool for thermal characterization of quantum cascade lasers | |
| Tessier et al. | Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations | |
| Wawer et al. | Spatially resolved thermoreflectance study of facet temperature in quantum cascade lasers | |
| Shi et al. | The research on temperature distribution of GaN-based blue laser diode | |
| Jha et al. | Thermoreflectance imaging of back-irradiance heating in high power diode lasers at several operating wavelengths | |
| Dilhaire et al. | Thermoreflectance calibration procedure on a laser diode: Application to catastrophic optical facet damage analysis | |
| Raad et al. | Thermoreflectance temperature measurements for optically emitting devices | |
| Hosea | Advances in the application of modulation spectroscopy to vertical cavity structures | |
| Lundh et al. | Integrated temperature mapping of lateral gallium nitride electronics | |
| Pierścińska et al. | Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance | |
| Bugajski et al. | Application of spatially resolved thermoreflectance for the study of facet heating in high power semiconductor lasers. | |
| Kozlowska et al. | Thermal properties of high-power diode lasers investigated by microthermography | |
| Epperlein | Temperature, stress, disorder, and crystallization effects in laser diodes: measurements and impacts | |
| Bechou et al. | Measurement of the thermal characteristics of packaged double-heterostructure light emitting diodes for space applications using spontaneous optical spectrum properties | |
| Pierściński et al. | Quantification of thermoreflectance temperature measurements in high-power semiconductor devices—lasers and laser bars | |
| Piwoński et al. | Thermoreflectance study of temperature distribution on the semiconductor laser mirrors. | |
| Jha | Thermal characterization of high-power diode lasers using thermoreflectance | |
| Pierścińska et al. | High-resolution mirror temperature mapping in GaN-based diode lasers by thermoreflectance spectroscopy | |
| Gu | Simultaneous Measurements of Stokes and Anti‐Stokes Raman Spectra for Thermal Characterization of Diode Laser Facet | |
| Natarajan et al. | Thermal characterization of discrete device layers in Al x Ga 1− x N based ultraviolet light emitting diodes | |
| Kowalczyk et al. | Dynamics of thermo-optical properties of semiconductor lasers |