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Lin et al., 2006 - Google Patents

Novel two-bit HfO/sub 2/nanocrystal nonvolatile flash memory

Lin et al., 2006

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Document ID
10744295110459455752
Author
Lin Y
Chien C
Lin C
Chang C
Lei T
Publication year
Publication venue
IEEE Transactions on Electron Devices

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Snippet

This paper presents a novel nonvolatile poly-Si-oxide-nitride-oxide-silicon-type Flash memory that was fabricated using hafnium oxide (HfO/sub 2/) nanocrystals as the trapping storage layer. The formation of HfO/sub 2/nanocrystals was confirmed using a number of …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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