Park et al., 2019 - Google Patents
Solution-processed nonvolatile organic transistor memory based on semiconductor blendsPark et al., 2019
- Document ID
- 974281004669681669
- Author
- Park Y
- Baeg K
- Kim C
- Publication year
- Publication venue
- ACS Applied Materials & Interfaces
External Links
Snippet
Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6, 13-bis (triisopropylsilylethynyl) pentacene and n-channel poly {[N, N′-bis (2-octyldodecyl)-naphthalene-1, 4, 5, 8-bis (dicarboximide) …
- 230000015654 memory 0 title abstract description 332
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- H01L51/05—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
- H01L51/0504—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
- H01L51/0508—Field-effect devices, e.g. TFTs
- H01L51/0512—Field-effect devices, e.g. TFTs insulated gate field effect transistors
- H01L51/0545—Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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