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Strobel et al., 2024 - Google Patents

High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

Strobel et al., 2024

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Document ID
6814107657353280458
Author
Strobel C
Chavarin C
Knaut M
Völkel S
Albert M
Hiess A
Max B
Wenger C
Kirchner R
Mikolajick T
Publication year
Publication venue
Advanced Electronic Materials

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Snippet

Hot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high‐frequency electronics beyond the limits of SiGe bipolar hetero transistors. With the exploration of 2D materials such as …
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    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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