Seevinck et al., 1984 - Google Patents

Classifications

• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/45—Differential amplifiers
  • H03F3/45071—Differential amplifiers with semiconductor devices only
  • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
  • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/45—Differential amplifiers
  • H03F3/45071—Differential amplifiers with semiconductor devices only
  • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
  • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
  • H03F3/45282—Long tailed pairs
  • H03F3/45291—Folded cascode stages
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/45—Differential amplifiers
  • H03F3/45071—Differential amplifiers with semiconductor devices only
  • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
  • H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
  • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
  • H03F3/3022—CMOS common source output SEPP amplifiers
  • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
  • H03F2203/45—Indexing scheme relating to differential amplifiers
  • H03F2203/45296—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete capacitive elements, e.g. a transistor coupled as capacitor
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/34—Dc amplifiers in which all stages are dc-coupled
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
  • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
• • H—ELECTRICITY
  • H03—BASIC ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/08—Modification of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
• • G—PHYSICS
  • G05—CONTROLLING; REGULATING
  • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
  • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
  • G05F3/02—Regulating voltage or current
  • G05F3/08—Regulating voltage or current wherein the variable is dc
  • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
  • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
  • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
  • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
  • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

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