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Ghannam et al., 1988 - Google Patents

Trends in Heterojunction Silicon Bipolar Transistors

Ghannam et al., 1988

Document ID
6496936684726181097
Author
Ghannam M
Nijs J
Mertens R
Publication year
Publication venue
Ultra-Fast Silicon Bipolar Technology

External Links

Snippet

7.1 Background As a result of the enormous improvement achieved in microelectronics technology during the last twenty years, it has become possible to combine Very Large Scale Integration (VLSI) and very high speed of operation. The minimum lateral dimension …
Continue reading at link.springer.com (other versions)

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