[go: up one dir, main page]

Nasser et al., 2019 - Google Patents

A porous silicon P-type interdigitated extended-gate field effect transistor pH sensor

Nasser et al., 2019

View PDF
Document ID
642881494303615313
Author
Nasser A
Ali G
Publication year
Publication venue
Silicon

External Links

Snippet

We report on a porous silicon (PSi) p-type interdigitated extended-gate field effect transistor (IEGFET) pH sensor. Two types of crystalline orientation substrates were utilized, namely, p- type< 100> and p-type< 111>. PSi was prepared by an electrochemical etching method with …
Continue reading at www.academia.edu (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28Electrolytic cell components
    • G01N27/30Electrodes, e.g. test electrodes; Half-cells
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

Similar Documents

Publication Publication Date Title
Smith et al. An integrated sensor for electrochemical measurements
JPH06222027A (en) Diamond Schottky diode, gas sensor and chemical substance sensor using the same
EP2372355A2 (en) Amorphous thin film for sensing
US11289601B2 (en) Negative capacitance semiconductor sensor
CN105070823A (en) Pressure sensor and manufacturing method thereof
Ali Interdigitated extended gate field effect transistor without reference electrode
US20050098841A1 (en) Nanopore chip with n-type semiconductor
CN108226236B (en) Integrated humidity sensor and manufacturing process thereof
Tezcan et al. A study on the complex dielectric (ε*)/electric-modulus (M*)/impedance (Z*), tangent-loss (tanδ), and ac conductivity (σac) of the Al/(S: DLC)/p-Si/Au (MIS)-type Schottky structures in a wide range of frequency and voltage at room temperature (RT)
EP3217167B1 (en) Humidity sensors with transistor structures and piezoelectric layer
CN107064255B (en) A composite electrode pH sensor based on CMOS technology and its preparation method
Nasser et al. A porous silicon P-type interdigitated extended-gate field effect transistor pH sensor
JP2002353422A (en) MFMOS capacitor having high dielectric constant material and method of manufacturing the same
CN105301079B (en) Semiconductor devices and its detection method for the detection of determinand ionic activity
US8431001B2 (en) Ion sensor for measuring ion concentration of a solution
Garcia-Canton et al. High-quality factor electrolyte insulator silicon capacitor for wireless chemical sensing
Molina-Reyes Design and electrochemical characterization of ion-sensitive capacitors with ALD Al 2 O 3 as the sensitive dielectric
Liu et al. Investigation of AlGaZnO pH sensors fabricated by using cosputtering system
WO2014098566A1 (en) An ion sensitive field effect transistor
Nascimento et al. Mechanisms of ion detection for fet-sensors using FTO: Role of cleaning process, ph sequence and electrical resistivity
KR20180107491A (en) Gas sensor, and method for manufacturing same
WO2002077632A1 (en) Field-effect transistor
Wang et al. Humidity Sensing of Ordered Macroporous Silicon With ${\rm HfO} _ {2} $ Thin-Film Surface Coating
Miao et al. Capacitive humidity sensing behavior of ordered Ni/Si microchannel plate nanocomposites
JP2742019B2 (en) Polarized gas detector