[go: up one dir, main page]

Hong et al., 2021 - Google Patents

Surface analysis and electrical property of oxygen-and Ga-doped CuAlO2

Hong et al., 2021

Document ID
612363424936605883
Author
Hong S
Lee M
Kim D
Publication year
Publication venue
Applied Physics A

External Links

Snippet

We have investigated the physicochemical properties of the p-type delafossite conductors, CuAlO2, and the possibility of charge carrier enriching to the delafossite. The oxygen partial pressure was a critical condition to get the stoichiometric CuAlO2 during the synthesis …
Continue reading at link.springer.com (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
Banerjee et al. Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films
Bérardan et al. Influence of the preparation conditions on the thermoelectric properties of Al‐doped ZnO
Butt et al. One-step rapid synthesis of Cu2Se with enhanced thermoelectric properties
Heremans et al. Thermopower enhancement in PbTe with Pb precipitates
Rastogi et al. Structure and optoelectronic properties of spray deposited Mg doped p-CuCrO2 semiconductor oxide thin films
Peng et al. Li‐doped Cr2MnO4: a new p‐type transparent conducting oxide by computational materials design
Lim et al. Chemical spray pyrolysis deposition and characterization of p-type CuCr1− xMgxO2 transparent oxide semiconductor thin films
Gu et al. Structure, optical, and magnetic properties of sputtered manganese and nitrogen-codoped ZnO films
Hsiao et al. The oxidation states of elements in pure and Ca-doped BiCuSeO thermoelectric oxides
Lunca-Popa et al. Tuning the electrical properties of the p-type transparent conducting oxide Cu1− xCr1+ xO2 by controlled annealing
Liu et al. A promising p-type transparent conducting material: Layered oxysulfide [Cu2S2][Sr3Sc2O5]
Monteiro et al. Conductivity in (Ag, Mg)-doped delafossite oxide CuCrO2
Przezdziecka et al. Influence of oxygen-rich and zinc-rich conditions on donor and acceptor states and conductivity mechanism of ZnO films grown by ALD—Experimental studies
Kim et al. Mechanism of nonalloyed Al ohmic contacts to n-type ZnO: Al epitaxial layer
Masarrat et al. Effect of Fe ion implantation on the thermoelectric properties and electronic structures of CoSb 3 thin films
Sarkar et al. Synergistic effect of band convergence and carrier transport on enhancing the thermoelectric performance of Ga doped Cu2Te at medium temperatures
Bohra et al. Stabilizing Thermoelectric Figure‐of‐Merit of Superionic Conductor Cu2Se through W Nanoinclusions
Park et al. Influence of Ba2+ doping on the thermoelectric properties of BiCuSeO fabricated by spark plasma sintering
Gong et al. Fabrication and thermoelectric properties of Ca-Co-O ceramics with negative Seebeck coefficient
TW201930633A (en) Superconducting compounds and methods for making the same
Koçyiğit et al. Photodiode behaviors of the AgSbS2 nanocrystals in a Schottky structure
Park et al. Improved polaronic transport under a strong Mott–Hubbard interaction in Cu-substituted NiO
Zhang et al. Improving thermoelectric properties of Cu2O powder via interface modification
Gao et al. Enhanced thermoelectric performance of CdO ceramics via Ba2+ doping
Hong et al. Surface analysis and electrical property of oxygen-and Ga-doped CuAlO2