[go: up one dir, main page]

Stach et al., 2009 - Google Patents

1 Gbit/s bidirectional data transmission over 100 m graded-index glass optical fiber with monolithically integrated transceiver chips

Stach et al., 2009

Document ID
5884107772303105858
Author
Stach M
Rinaldi F
Gadallah A
Lorch S
Kardosh I
Gerlach P
Michalzik R
Publication year
Publication venue
2006 European Conference on Optical Communications

External Links

Snippet

1 Gbit/s Bidirectional Data Transmission over 100 m Graded-Index Glass Optical Fiber with Monolithically Integrated Transceiver Page 1 1 Gbit/s Bidirectional Data Transmission over 100 m Graded-Index Glass Optical Fiber with Monolithically Integrated Transceiver Chips M …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting lasers (SE-lasers)
    • H01S5/183—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers)
    • H01S5/18308—Surface-emitting lasers (SE-lasers) having a vertical cavity (VCSE-lasers) having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/69—Electrical arrangements in the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
    • H04B10/112—Line-of-sight transmission over an extended range
    • H04B10/1121—One-way transmission
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms

Similar Documents

Publication Publication Date Title
US5914976A (en) VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US6392256B1 (en) Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US5652813A (en) Line bi-directional link
KR100660471B1 (en) Advanced Doped P-type Contact for High-speed Front-illuminated Photodiodes
Stach et al. Bidirectional optical interconnection at Gb/s data rates with monolithically integrated VCSEL-MSM transceiver chips
Personick Review of fundamentals of optical fiber systems
Stach et al. 1 Gbit/s bidirectional data transmission over 100 m graded-index glass optical fiber with monolithically integrated transceiver chips
TWI664718B (en) Boss-Shaped Avalanche Photodetector
Agashe et al. A monolithically integrated long-wavelength balanced photodiode using asymmetric twin-waveguide technology
Vez et al. 10-Gbit/s VCSELs for datacom: Devices and applications
Stach et al. Miniaturized Monolithically Integrated Transceiver Chips for Bidirectional Data Transmission over Graded-Index Glass Optical Fiber
Lee et al. A 35-GHz, 0.8-A/W and 26-µm Misalignment Tolerance Microlens-Integrated pin Photodiodes
Stach et al. Monolithically integrated transceiver chips for bidirectional optical interconnection
Kern et al. Bidirectional multimode fiber interconnection at Gb/s data rates with monolithically integrated VCSEL–PIN transceiver chips
Stach et al. 1 Gbit/s full-duplex bidirectional optical data transmission over 500 m of 50 μm-core graded-index multimode fiber with novel monolithically integrated transceiver
Stach et al. Monolithically integrated GaAs-based transceiver chips for bidirectional optical data transmission
Stach et al. 3 Gbit/s data transmission with monolithically integrated optical transceiver chips for very short reach applications
Kern et al. 10 Gbit/s bidirectional multimode data link using monolithically integrated VCSEL-PIN transceiver devices
JP7661633B1 (en) Semiconductor photodetector, optical line terminal, multilevel intensity modulation transmitter/receiver, digital coherent receiver, optical fiber radio system, SPAD sensor system, and lidar device
Michalzik et al. Monolithic integration of VCSELs and MSM photodiodes for bidirectional multimode fiber communications
Michalzik et al. Bidirectional multimode fiber interconnection
JP7471550B1 (en) Semiconductor photodetector, optical line terminal, multilevel intensity modulation transmitter/receiver, digital coherent receiver, optical fiber radio system, SPAD sensor system, and lidar device
Kern et al. 6 Gbit/s full-duplex multimode fiber link with monolithic VCSEL-PIN transceiver chips
Stach et al. 1 Gbit/s Full-Duplex Bidirectional Optical Data Transmission over 500 m of 50 micrometer-Core Graded-Index Multimode Fiber with Novel Monolithically
Kern et al. 7 Gbit/s Data Transmission over 500 m Multimode Fiber with Monolithically Integrated Bidirectional VCSEL-Based Transceiver Chips