[go: up one dir, main page]

d'Aubigné et al., 1987 - Google Patents

Quantization of excitonic polaritons in CdTe-CdZnTe double heterostructures

d'Aubigné et al., 1987

View PDF
Document ID
5711734680729123736
Author
d'Aubigné Y
LE SI D
Wasiela A
Magnea N
Million A
et al.
Publication year
Publication venue
Le Journal de Physique Colloques

External Links

Snippet

Reflectivity, transmission and excitation spectra at energies near the 1S exciton resonance of CdTe-CdZnTe double heterostructures are reported. These spectra allow a detailed study of the quantized states of the excitonic polariton resulting from its confinement in the CdTe …
Continue reading at hal.science (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Similar Documents

Publication Publication Date Title
US6816530B2 (en) Nonlinear semiconductor light sources
Butté et al. Room-temperature polariton luminescence from a bulk GaN microcavity
Smet et al. Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
Banin et al. Exchange interaction in InAs nanocrystal quantum dots
Akimoto et al. Short-wavelength intersubband transitions down to 1.6 μm in ZnSe/BeTe type-II superlattices
Abstreiter et al. Inelastic light scattering by electronic excitations in semiconductor heterostructures
US5359617A (en) Nonlinear optical device
Neogi et al. Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure
d'Aubigné et al. Quantization of excitonic polaritons in CdTe-CdZnTe double heterostructures
Alvi Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain
Chen et al. Interference of the exciton-polariton waves in GaAs thin layers
Smiri et al. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311) A and (311) B InP planes
Tuzemen et al. Investigation of linear and nonlinear optical absorption coefficients and refractive index changes of a zigzag quantum well with structure parameters and applied external fields
Chan et al. The effect of carrier-induced change on the optical properties of AlGaAs-GaAs intermixed quantum wells
MERLE et al. QUANTIZATION OF EXCITONIC POLARITONS IN CdTe-CdZnTe DOUBLE HETEROSTRUCTURES
Lankes et al. Hole mass determination in ZnSe by observation of standing polariton waves
Loginov et al. Interference of polariton waves in structures with wide GaAs/AlGaAs quantum wells
US6075254A (en) Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors
Chang et al. Universal curves for optical‐matrix elements of strained quantum wells
Kajikawa et al. Optical anisotropy of (11N) and vicinal (001) quantum wells
Lefebvre et al. Distinct center-of-mass quantization of light-hole and heavy-hole excitons in wide ZnTe-(Zn, Mg) Te quantum wells
JPH05150198A (en) Semiconductor quantum well optical modulator
Öztürk et al. Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration
Shen et al. Bias independent heavy-and light-hole degeneracy in InGaAs/InGaAsP quantum wells
Nagano et al. Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates