[go: up one dir, main page]

Lei et al., 2019 - Google Patents

Use of High Voltage OBIRCH Fault Isolation Technique in Failure Analysis of High Voltage IC's

Lei et al., 2019

Document ID
4025129148888242605
Author
Lei C
Lee A
Kang Q
Lee M
Yang S
Oliver D
Giao T
Publication year
Publication venue
2019 IEEE International Reliability Physics Symposium (IRPS)

External Links

Snippet

In this paper, we present an extension of Optical Beam Induced Resistance CHange (OBIRCH,<;= 40V) to the failure analysis and fault isolation of high voltage (HV) MOSFET failures up to 3KV. Current available OBIRCH amplifiers can only source up to 40V, while …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263Testing dielectric strength or breakdown voltage; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2621Circuits therefor for testing field effect transistors, i.e. FET's
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/02Testing of electric apparatus, lines or components, for short-circuits, discontinuities, leakage of current, or incorrect line connection
    • G01R31/024Arrangements for indicating continuity or short-circuits in electric apparatus or lines, leakage or ground faults
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302Contactless testing
    • G01R31/308Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere

Similar Documents

Publication Publication Date Title
Zhang et al. Dynamic breakdown voltage of GaN power HEMTs
CN101517743B (en) Tapered voltage polysilicon diode electrostatic discharge circuit for power mosfets and ics
Li et al. Indirect IGBT over-current detection technique via gate voltage monitoring and analysis
EP2037501A1 (en) Fast triggering ESD protection device and method for designing same
US20130027067A1 (en) Damage reduction method and apparatus for destructive testing of power semiconductors
US9711960B2 (en) Built-in test circuits for transient voltage protection devices
Yu et al. Short-circuit capability: benchmarking SiC and GaN devices with Si-based technologies
CN105047663A (en) Integrated circuit having an esd protection structure and photon source
CN112363037A (en) Limit performance verification circuit, system and method for field effect transistor
Sathik et al. Short circuit detection and fault current limiting method for IGBTs
Bashar et al. A review of short circuit performance in 650 v power devices: Sic mosfets, silicon super-junction mosfets, sic cascode jfets, silicon mosfets and silicon igbts
Du et al. Impact of the case temperature on the reliability of SiC MOSFETs under repetitive short circuit tests
Wang et al. Exceptional gate overvoltage robustness in P-gate GaN HEMT with integrated circuit interface
Borghese et al. Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters
Boige et al. Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy
Aeloiza et al. An experimental demonstration of short circuit protection of SiC Devices
Lei et al. Use of High Voltage OBIRCH Fault Isolation Technique in Failure Analysis of High Voltage IC's
Romero et al. Non-destructive and destructive shortcircuit characterization of a high-current SiC MOSFET
Park et al. Concurrent ESD and surge protection clamps in RF power amplifier
KR102792779B1 (en) Apparatus for protecting a short in a switch
Cao et al. Statically triggered active ESD clamps for high-voltage applications
CN116754991A (en) Multi-element leakage current measuring system
Degrenne et al. Short-circuit robustness of discrete SiC MOSFETs in half-bridge configuration
Sun et al. Correlation between pulse IV and human body model (HBM) tests for drain electrostatic discharge (ESD) robustness evaluation of GaN power HEMTs
Findenig et al. Robustness of SiC MOSFETs under Repetitive High Current Pulses