| Article | |
| Title | Total Ionizing Dose in Nano-Scaled CMOS Technologies |
| Related title | Total Ionizing Dose in Nano-Scaled CMOS Technologies |
| Author(s) | Faccio, Federico (CERN) ; Borghello, Giulio (CERN) ; Bonaldo, Stefano (U. Padua (main)) |
| Publication | 2025 |
| Number of pages | 32 |
| In: | IEEE Trans. Nucl. Sci. 72 (2025) 3247-3278 |
| DOI | 10.1109/TNS.2025.3593959 |
| Subject category | Nuclear Physics - Experiment |
| Abstract | espite incredible technological advances in the fabrication of MOS transistors, the widespread use of isolation layers makes the total ionizing dose (TID) a persistent threat to the operation of these devices in ionizing radiation environments. This article provides a comprehensive review of the past three decades of research on the TID effects in transistors built across various scaled complementary metal-oxide-semiconductor (CMOS) nodes, ranging from a 1.6-μm planar MOS field-effect transistor (MOSFET) technology to FinFETs produced in a 16-nm node. The focus is on understanding the evolution of the TID effects with the scaling down, as different oxides and channel layouts are employed in the CMOS processes. |
| Copyright/License | publication: © 2025 The Author(s) (License: CC-BY-4.0) |
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Record created 2025-11-04, last modified 2025-11-04