| Reentrant charge order transition in the extended Hubbard model R Pietig, R Bulla, S Blawid Physical review letters 82 (20), 4046, 1999 | 83 | 1999 |
| COOS: a wave-function based Schrödinger–Poisson solver for ballistic nanotube transistors M Claus, S Mothes, S Blawid, M Schröter Journal of Computational Electronics 13 (3), 689-700, 2014 | 54 | 2014 |
| Periodic Anderson model with correlated conduction electrons T Schork, S Blawid Physical Review B 56 (11), 6559, 1997 | 42 | 1997 |
| Electronic and structural properties of the natural dyes curcumin, bixin and indigo L Michels, A Richter, RK Chellappan, HI Røst, A Behsen, KH Wells, L Leal, ... RSC advances 11 (23), 14169-14177, 2021 | 29 | 2021 |
| Gap to transition-temperature ratio in density-wave ordering: A dynamical mean-field study S Blawid, A Millis Physical Review B 62 (4), 2424, 2000 | 29 | 2000 |
| Quantum phonons and the charge-density-wave transition temperature: A dynamical mean-field study S Blawid, AJ Millis Physical Review B 63 (11), 115114, 2001 | 24 | 2001 |
| Kondo lattice model with correlated conduction electrons T Schork, S Blawid, J Igarashi Physical Review B 59 (15), 9888, 1999 | 23 | 1999 |
| High-frequency ballistic transport phenomena in Schottky barrier CNTFETs M Claus, S Blawid, S Mothes, M Schroter IEEE transactions on electron devices 59 (10), 2610-2618, 2012 | 20 | 2012 |
| Benchmarking contact quality in N-type organic thin film transistors through an improved virtual-source emission-diffusion model NJ Dallaire, S Brixi, M Claus, S Blawid, BH Lessard Applied Physics Reviews 9 (1), 2022 | 19 | 2022 |
| Impact of injection limitations on the contact resistance and the carrier mobility of organic field effect transistors S Donnhäuser, A Pacheco-Sanchez, K Haase, SCB Mannsfeld, M Claus, ... Organic Electronics 99, 106343, 2021 | 18 | 2021 |
| Reconfigurable NanoFETs: Performance projections for multiple-top-gate architectures R Moura, N Tiencken, S Mothes, M Claus, S Blawid IEEE Transactions on Nanotechnology 17 (3), 467-474, 2018 | 18 | 2018 |
| Device and a method and mask for forming a device L Lattard, M Roessiger, L Bauch, S Blawid, M Gutsch US Patent App. 11/375,912, 2007 | 16 | 2007 |
| Performance projections for a reconfigurable tunnel NanoFET S Blawid, DLM de Andrade, S Mothes, M Claus IEEE Journal of the Electron Devices Society 5 (6), 473-479, 2017 | 15 | 2017 |
| Semiclassical approach to calculating the influence of local lattice fluctuations on electronic properties of metals S Blawid, A Deppeler, AJ Millis Physical Review B 67 (16), 165105, 2003 | 14 | 2003 |
| Modeling organic thin-film transistors based on the virtual source concept: A case study AA Lima, S Blawid Solid-State Electronics 161, 107639, 2019 | 13 | 2019 |
| Impact of near-contact barriers on the subthreshold slope of short-channel CNTFETs M Claus, S Blawid, M Schröter 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 13 | 2013 |
| Method and System for Adjusting an Optical Model R Pforr, T Winkler, R Ziebold, W Kostler, J Reichelt, S Blawid, ... US Patent App. 11/760,295, 2008 | 11 | 2008 |
| Metal-insulator transitions due to self-doping S Blawid, HA Tuan, T Yanagisawa, P Fulde Physical Review B 54 (11), 7771, 1996 | 11 | 1996 |
| Towards a multiscale modeling framework for metal-CNT interfaces M Claus, A Fediai, S Mothes, J Knoch, D Ryndyk, S Blawid, G Cuniberti, ... 2014 International Workshop on Computational Electronics (IWCE), 1-3, 2014 | 10 | 2014 |
| Phenomenological modeling of charge injection-beyond the schottky barrier paradigm S Blawid, M Claus, M Schröter ECS Transactions 49 (1), 85, 2012 | 9 | 2012 |
Martin ClausInfineon Technologies AGVerified email at infineon.com
