| Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets X Huang, Z Zeng, S Bao, M Wang, X Qi, Z Fan, H Zhang Nature communications 4 (1), 1444, 2013 | 909 | 2013 |
| Growth of noble metal nanoparticles on single-layer TiS 2 and TaS 2 nanosheets for hydrogen evolution reaction Z Zeng, C Tan, X Huang, S Bao, H Zhang Energy & Environmental Science 7 (2), 797-803, 2014 | 386 | 2014 |
| MoS 2 nanoflower-decorated reduced graphene oxide paper for high-performance hydrogen evolution reaction CB Ma, X Qi, B Chen, S Bao, Z Yin, XJ Wu, Z Luo, J Wei, HL Zhang, ... Nanoscale 6 (11), 5624-5629, 2014 | 356 | 2014 |
| Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature communications 8 (1), 1845, 2017 | 206 | 2017 |
| Integration of III–V materials and Si-CMOS through double layer transfer process KH Lee, S Bao, E Fitzgerald, CS Tan Japanese Journal of Applied Physics 54 (3), 030209, 2015 | 104 | 2015 |
| Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ... Applied physics letters 109 (24), 2016 | 100 | 2016 |
| A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers S Bao, Y Wang, K Lina, L Zhang, B Wang, WA Sasangka, KEK Lee, ... Journal of Semiconductors 42 (2), 023106, 2021 | 96 | 2021 |
| High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform Y Lin, KH Lee, S Bao, X Guo, H Wang, J Michel, CS Tan Photonics Research 5 (6), 702-709, 2017 | 81 | 2017 |
| Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan Journal of Applied Physics 116 (10), 2014 | 70 | 2014 |
| Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer KH Lee, S Bao, B Wang, C Wang, SF Yoon, J Michel, EA Fitzgerald, ... AIP Advances 6 (2), 2016 | 67 | 2016 |
| Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan APL Materials 3 (1), 2015 | 64 | 2015 |
| Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan Applied Physics Express 9 (8), 086501, 2016 | 58 | 2016 |
| GeSn-on-insulator substrate formed by direct wafer bonding D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo Applied Physics Letters 109 (2), 2016 | 47 | 2016 |
| The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD–Application to a 200 mm GaAs virtual substrate D Kohen, S Bao, KH Lee, KEK Lee, CS Tan, SF Yoon, EA Fitzgerald Journal of Crystal Growth 421, 58-65, 2015 | 42 | 2015 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 38 | 2017 |
| Monolithic integration of Si-CMOS and III-V-on-Si through direct wafer bonding process KH Lee, Y Wang, B Wang, L Zhang, WA Sasangka, SC Goh, S Bao, ... IEEE Journal of the Electron Devices Society 6, 571-578, 2017 | 33 | 2017 |
| Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications KH Lee, S Bao, Y Lin, W Li, P Anantha, L Zhang, Y Wang, J Michel, ... Journal of Materials Research 32 (21), 4025-4040, 2017 | 27 | 2017 |
| Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking KH Lee, S Bao, D Kohen, CC Huang, KEK Lee, E Fitzgerald, CS Tan 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 560-565, 2015 | 22 | 2015 |
| AlN-AlN layer bonding and its thermal characteristics S Bao, KH Lee, GY Chong, EA Fitzgerald, CS Tan ECS Journal of Solid State Science and Technology 4 (7), P200, 2015 | 21 | 2015 |
| Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer KH Lee, S Bao, Y Wang, EA Fitzgerald, C Seng Tan Journal of Applied Physics 123 (1), 2018 | 20 | 2018 |
