| Temperature-dependent phonon shifts in monolayer MoS2 NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ... Applied Physics Letters 103 (9), 2013 | 301 | 2013 |
| Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ... Acs Nano 10 (3), 3580-3588, 2016 | 295 | 2016 |
| Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition M Amani, ML Chin, AG Birdwell, TP O’Regan, S Najmaei, Z Liu, ... Applied Physics Letters 102 (19), 2013 | 287 | 2013 |
| Electrical transport properties of polycrystalline monolayer molybdenum disulfide S Najmaei, M Amani, ML Chin, Z Liu, AG Birdwell, TP O’Regan, ... ACS nano 8 (8), 7930-7937, 2014 | 169 | 2014 |
| Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007 | 157 | 2007 |
| Theoretical study on strain-induced variations in electronic properties of monolayer MoS2 L Dong, RR Namburu, TP O’Regan, M Dubey, AM Dongare Journal of Materials Science 49 (19), 6762-6771, 2014 | 100 | 2014 |
| Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets L Dong, AM Dongare, RR Namburu, TP O'Regan, M Dubey Applied Physics Letters 104 (5), 2014 | 54 | 2014 |
| Blue shifting of the A exciton peak in folded monolayer 1H-MoS2 FJ Crowne, M Amani, AG Birdwell, ML Chin, TP O'Regan, S Najmaei, ... arXiv preprint arXiv:1307.1720, 2013 | 53 | 2013 |
| Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications PB Shah, M Amani, ML Chin, TP O’regan, FJ Crowne, M Dubey Solid-state electronics 91, 87-90, 2014 | 48 | 2014 |
| Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ... Applied Physics Letters 111 (5), 2017 | 44 | 2017 |
| Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system ML Chin, P Periasamy, TP O'regan, M Amani, C Tan, RP O'hayre, JJ Berry, ... Journal of Vacuum Science & Technology B 31 (5), 2013 | 44 | 2013 |
| Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics TP O’Regan, MV Fischetti, B Soree, S Jin, W Magnus, M Meuris Journal of Applied Physics 108 (10), 2010 | 44 | 2010 |
| Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections TP O’Regan, PK Hurley, B Sorée, MV Fischetti Applied Physics Letters 96 (21), 2010 | 35 | 2010 |
| Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing W Cabrera, B Brennan, H Dong, TP O'Regan, IM Povey, S Monaghan, ... Applied Physics Letters 104 (1), 2014 | 33 | 2014 |
| Electrically active interface defects in the In0. 53Ga0. 47As MOS system V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, É O’Connor, ... Microelectronic engineering 109, 182-188, 2013 | 30 | 2013 |
| Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain L Dong, J Wang, R Namburu, TP O'Regan, M Dubey, AM Dongare Journal of Applied Physics 117 (24), 2015 | 26 | 2015 |
| Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ... 2D Materials 5 (4), 045016, 2018 | 25 | 2018 |
| Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators Y Zhang, MV Fischetti, B Sorée, T O’Regan Journal of Applied Physics 108 (12), 2010 | 24 | 2010 |
| Calculation of the capacitance-voltage characteristic of GaAs, In0. 53Ga0. 47As, and InAs metal-oxide-semiconductor structures TP O’Regan, PK Hurley Applied Physics Letters 99 (16), 2011 | 23 | 2011 |
| Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain NA Lanzillo, TP O’Regan, SK Nayak Computational Materials Science 112, 377-382, 2016 | 18 | 2016 |
Pankaj B ShahUS Army Research LabVerified email at mail.mil
