| High-stability Er/sup 3+/-doped superfluorescent fiber sources DC Hall, WK Burns, RP Moeller Journal of lightwave technology 13 (7), 1452-1460, 2002 | 172 | 2002 |
| High-power disorder-defined coupled stripe Al/sub/ital y//Ga/sub 1/minus///sub/ital y//As-GaAs-In/sub/ital x//Ga/sub 1/minus///sub/ital x//As quantum well heterostructure lasers DC Hall, LJ Guido, P Gavrilovic, K Meehan, JE Williams, W Stutius Appl. Phys. Lett.;(United States) 55 (3), 1989 | 160 | 1989 |
| Reduced temperature sensitivity Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers with (Si/sub 2/)/sub x/(GaAs)/sub 1-x/''barriers'' GS Jackson, DG Deppe, KC Hsieh, DC Hall, RD Burnham, RL Thornton, ... Appl. Phys. Lett.;(United States) 48 (17), 1986 | 149* | 1986 |
| High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers L Goldberg, D Mehuys, MR Surette, DC Hall IEEE journal of quantum electronics 29 (6), 2028-2043, 2002 | 111 | 2002 |
| Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobe DC Hall, L Goldberg, D Mehuys Applied physics letters 61 (4), 384-386, 1992 | 111 | 1992 |
| Coupled stripe Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering DG Deppe, GS Jackson, RD Burnham, RL Thornton Appl. Phys. Lett.;(United States) 50 (11), 1987 | 69* | 1987 |
| GaAs MOSFET using InAlP native oxide as gate dielectric X Li, Y Cao, DC Hall, P Fay, B Han, A Wibowo, N Pan IEEE Electron Device Letters 25 (12), 772-774, 2004 | 66 | 2004 |
| 3.3 W CW diffraction limited broad area semiconductor amplifier L Goldberg, DC Hall, D Mehuys Electronics Letters 28 (12), 1082-1084, 1992 | 57 | 1992 |
| Wavelength stability optimisation in Er3+-doped superfluorescent fibre sources DC Hall, WK Burns Electronics letters 30 (8), 653-654, 1994 | 53 | 1994 |
| Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers LJ Guido, GS Jackson, DC Hall, WE Plano, N Holonyak Jr Applied physics letters 52 (7), 522-524, 1988 | 52 | 1988 |
| Nonselective wet oxidation of AlGaAs heterostructure waveguides through controlled addition of oxygen Y Luo, DC Hall IEEE Journal of Selected Topics in Quantum Electronics 11 (6), 1284-1291, 2006 | 45 | 2006 |
| Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy KA Wang, Y Cao, J Simon, J Zhang, A Mintairov, J Merz, D Hall, T Kosel, ... Applied physics letters 89 (16), 2006 | 43 | 2006 |
| Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications Y Cao, J Zhang, X Li, TH Kosel, P Fay, DC Hall, XB Zhang, RD Dupuis, ... Applied Physics Letters 86 (6), 2005 | 43 | 2005 |
| Ultra-high-stability two-stage superfluorescent fibre sources for fibre optic gyroscopes PZ Zatta, DC Hall Electronics letters 38 (9), 406-408, 2002 | 37 | 2002 |
| Room-temperature 1.5 μm photoluminescence of -doped native oxides L Kou, DC Hall, H Wu Applied physics letters 72 (26), 3411-3413, 1998 | 37 | 1998 |
| High‐power gain‐guided coupled‐stripe quantum well laser array by hydrogenation GS Jackson, DC Hall, LJ Guido, WE Plano, N Pan, N Holonyak Jr, ... Applied physics letters 52 (9), 691-693, 1988 | 37 | 1988 |
| Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric Y Cao, X Li, J Zhang, P Fay, TH Kosel, DC Hall IEEE Electron Device Letters 27 (5), 317-319, 2006 | 34 | 2006 |
| Native‐oxide‐defined coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers JM Dallesasse, N Holonyak Jr, DC Hall, N El‐Zein, AR Sugg, SC Smith, ... Applied physics letters 58 (8), 834-836, 1991 | 34 | 1991 |
| Oxidized heterostructure planar waveguides Y Luo, DC Hall, L Kou, L Steingart, JH Jackson, O Blum, H Hou Applied physics letters 75 (20), 3078-3080, 1999 | 33 | 1999 |
| Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si DG Deppe, DC Hall, N Holonyak Jr, RJ Matyi, H Shichijo, JE Epler Applied physics letters 53 (10), 874-876, 1988 | 33 | 1988 |
