| Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I. Experimental Results HZ Massoud, JD Plummer, EA Irene Journal of the electrochemical society 132 (11), 2685, 1985 | 466 | 1985 |
| Electron trapping in SiO2 at 295 and 77 °K DR Young, EA Irene, DJ DiMaria, RF De Keersmaecker, HZ Massoud Journal of Applied Physics 50 (10), 6366-6372, 1979 | 319 | 1979 |
| Thermal oxidation of silicon in dry oxygen: accurate determination of the kinetic rate constants HZ Massoud, JD Plummer, EA Irene Journal of the Electrochemical Society 132 (7), 1745, 1985 | 270 | 1985 |
| Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II. Physical Mechanisms HZ Massoud, JD Plummer, EA Irene Journal of The Electrochemical Society 132 (11), 2693, 1985 | 228 | 1985 |
| Causes and prevention of temperature-dependent bubbles in silicon wafer bonding K Mitani, V Lehmann, R Stengl, D Feijoo, UMGUM Gösele, ... Japanese journal of applied physics 30 (4R), 615, 1991 | 150 | 1991 |
| Silicon oxidation studies: Silicon orientation effects on thermal oxidation EA Irene, HZ Massoud, E Tierney Journal of the Electrochemical Society 133 (6), 1253, 1986 | 139 | 1986 |
| Measurement and modeling of charge feedthrough in n-channel MOS analog switches WB Wilson, HZ Massoud, EJ Swanson, RT George, RB Fair IEEE journal of solid-state circuits 20 (6), 1206-1213, 1985 | 115 | 1985 |
| The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation Y Kim, HZ Massoud, RB Fair Journal of electronic materials 18 (2), 143-150, 1989 | 110 | 1989 |
| Analytical relationship for the oxidation of silicon in dry oxygen in the thin‐film regime HZ Massoud, JD Plummer Journal of applied physics 62 (8), 3416-3423, 1987 | 103 | 1987 |
| An investigation of Si‐SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon SC Vitkavage, EA Irene, HZ Massoud Journal of applied physics 68 (10), 5262-5272, 1990 | 80 | 1990 |
| Charge‐transfer dipole moments at the Si–SiO2 interface HZ Massoud Journal of applied physics 63 (6), 2000-2005, 1988 | 74 | 1988 |
| Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording JJ Mastrototaro, HZ Massoud, TC Pilkington, RE Ideker IEEE transactions on biomedical engineering 39 (3), 271-279, 1992 | 52 | 1992 |
| Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor HZ Massoud, RK Sampson US Patent 5,313,044, 1994 | 47 | 1994 |
| The onset of the thermal oxidation of silicon from room temperature to 1000 C HZ Massoud Microelectronic Engineering 28 (1-4), 109-116, 1995 | 46 | 1995 |
| The spectral grid method: a novel fast Schrodinger-equation solver for semiconductor nanodevice simulation QH Liu, C Cheng, HZ Massoud IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2004 | 39 | 2004 |
| Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency R Deaton, HZ Massoud IEEE transactions on semiconductor manufacturing 5 (4), 347-358, 1992 | 37 | 1992 |
| Spectral element method for the Schrödinger-Poisson system C Cheng, QH Liu, JH Lee, HZ Massoud Journal of Computational Electronics 3 (3), 417-421, 2004 | 36 | 2004 |
| The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface HZ Massoud, EH Poindexter, CR Helms Electrochemical Society, 1996 | 34 | 1996 |
| Effect of thermally induced stresses on the rapid‐thermal oxidation of silicon R Deaton, HZ Massoud Journal of applied physics 70 (7), 3588-3592, 1991 | 32 | 1991 |
| Thermal oxidation of silicon in the ultrathin regime HZ Massoud Solid-State Electronics 41 (7), 929-934, 1997 | 31 | 1997 |
