| Performance and ruggedness of 1200V SiC—Trench—MOSFET D Peters, R Siemieniec, T Aichinger, T Basler, R Esteve, W Bergner, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 199 | 2017 |
| Investigation of threshold voltage stability of SiC MOSFETs D Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 120 | 2018 |
| The new CoolSiC™ trench MOSFET technology for low gate oxide stress and high performance D Peters, T Basler, B Zippelius, T Aichinger, W Bergner, R Esteve, ... PCIM Europe 2017; International Exhibition and Conference for Power …, 2017 | 114 | 2017 |
| A SiC trench MOSFET concept offering improved channel mobility and high reliability R Siemieniec, D Peters, R Esteve, W Bergner, D Kück, T Aichinger, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 108 | 2017 |
| Mechanical analysis of press-pack IGBTs T Poller, T Basler, M Hernes, S D’Arco, J Lutz Microelectronics Reliability 52 (9-10), 2397-2402, 2012 | 91 | 2012 |
| Short-circuit ruggedness of high-voltage IGBTs J Lutz, T Basler 2012 28th International Conference on Microelectronics Proceedings, 243-250, 2012 | 61 | 2012 |
| Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density S Palanisamy, T Basler, J Lutz, C Künzel, L Wehrhahn-Kilian, R Elpelt 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 56 | 2021 |
| Practical aspects and body diode robustness of a 1200 V SiC trench MOSFET T Basler, D Heer, D Peters, T Aichinger, R Schörner PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 49 | 2018 |
| Ruggedness of 1200 V SiC MPS diodes S Fichtner, S Frankeser, J Lutz, R Rupp, T Basler, R Gerlach Microelectronics Reliability 55 (9-10), 1677-1681, 2015 | 46 | 2015 |
| Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement S Palanisamy, S Fichtner, J Lutz, T Basler, R Rupp 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 42 | 2016 |
| Repetitive surge current test of SiC MPS diode with load in bipolar regime S Palanisamy, J Kowalsky, J Lutz, T Basler, R Rupp, J Moazzami-Fallah 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 41 | 2018 |
| Simple vector calculation and constraint-based fault-tolerant control for a single-phase CHBMC D Xie, C Lin, Q Deng, H Lin, C Cai, T Basler, X Ge IEEE Transactions on Power Electronics, 2024 | 39 | 2024 |
| Characterization of the parasitic turn-on behavior of discrete CoolSiC??? MOSFETs K Sobe, T Basler, B Klobucar PCIM Europe 2019; International Exhibition and Conference for Power …, 2019 | 35 | 2019 |
| Thermal interface material having defined thermal, mechanical and electric properties C Kasztelan, E Fuergut, M Mengel, F Brucchi, T Basler US Patent App. 15/333,993, 2017 | 35 | 2017 |
| OC switch fault diagnosis, pre-and postfault DC voltage balancing control for a CHBMC using SVM concept D Xie, C Lin, H Lin, W Liu, Y Du, T Basler IEEE Transactions on Power Electronics 39 (1), 677-692, 2023 | 33 | 2023 |
| Avalanche robustness of SiC MPS diodes T Basler, R Rupp, R Gerlach, B Zippelius, M Draghici PCIM Europe 2016; International Exhibition and Conference for Power …, 2016 | 28 | 2016 |
| Surge current capability of IGBTs T Basler, J Lutz, R Jakob, T Brückner International Multi-Conference on Systems, Signals & Devices, 1-6, 2012 | 28 | 2012 |
| 1200V SiC Trench-MOSFET optimized for high reliability and high performance D Peters, T Aichinger, T Basler, W Bergner, D Kueck, R Esteve Materials Science Forum 897, 489-492, 2017 | 26 | 2017 |
| Silicon carbide semiconductor component T Basler, HJ Schulze, R Siemieniec US Patent 10,950,696, 2021 | 25 | 2021 |
| Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs T Basler, R Bhojani, J Lutz, R Jakob 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa …, 2013 | 25 | 2013 |
Jens KowalskyProfessur für Leistungselektronik und EMVVerified email at etit.tu-chemnitz.de
