| Tunnel field-effect transistors (TFET): modelling and simulation JK Mamidala, R Vishnoi, P Pandey John Wiley & Sons, 2016 | 196 | 2016 |
| Switching Dynamics of Ferroelectric Zr-Doped HfO2 C Alessandri, P Pandey, A Abusleme, A Seabaugh IEEE Electron Device Letters 39 (11), 1780-1783, 2018 | 131 | 2018 |
| Automated error correction in IBM quantum computer and explicit generalization D Ghosh, P Agarwal, P Pandey, BK Behera, PK Panigrahi Quantum Information Processing 17 (6), 153, 2018 | 102 | 2018 |
| Monte Carlo simulation of switching dynamics in polycrystalline ferroelectric capacitors C Alessandri, P Pandey, A Abusleme, A Seabaugh IEEE Transactions on Electron Devices 66 (8), 3527-3534, 2019 | 85 | 2019 |
| A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling P Pandey, R Vishnoi, MJ Kumar Journal of Computational Electronics 14 (1), 280-287, 2015 | 45 | 2015 |
| Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate S Fathipour, P Pandey, S Fullerton-Shirey, A Seabaugh Journal of Applied Physics 120 (23), 2016 | 37 | 2016 |
| Stacked ferroelectric non-planar capacitors in a memory bit-cell RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A MATHURIYA, ... US Patent 11,423,967, 2022 | 30 | 2022 |
| Steep slope transistors: Tunnel FETs and beyond A Seabaugh, C Alessandri, MA Heidarlou, HM Li, L Liu, H Lu, S Fathipour, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 349-351, 2016 | 26 | 2016 |
| Experimentally validated, predictive Monte Carlo modeling of ferroelectric dynamics and variability C Alessandri, P Pandey, AC Seabaugh 2018 IEEE International Electron Devices Meeting (IEDM), 16.2. 1-16.2. 4, 2018 | 22 | 2018 |
| Partial switching of ferroelectrics for synaptic weight storage EW Kinder, C Alessandri, P Pandey, G Karbasian, S Salahuddin, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 18 | 2017 |
| Programming-pulse dependence of ferroelectric partial polarization: Insights from a comparative study of PZT and HZO capacitors P Pandey, WS Hwang, KR Udayakumar, TS Moise, AC Seabaugh IEEE Transactions on Electron Devices 67 (10), 4482-4487, 2020 | 12 | 2020 |
| Stacked ferroelectric planar capacitors in a memory bit-cell RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A MATHURIYA, ... US Patent 11,521,667, 2022 | 11 | 2022 |
| Method of forming stacked ferroelectric non-planar capacitors in a memory bit-cell RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A MATHURIYA, ... US Patent 11,501,813, 2022 | 11 | 2022 |
| Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A MATHURIYA, ... US Patent 11,545,204, 2023 | 10 | 2023 |
| Drain current model for SOI TFET considering source and drain side tunneling P Pandey, R Vishnoi, MJ Kumar 2014 IEEE 2nd international conference on emerging electronics (ICEE), 1-5, 2014 | 9 | 2014 |
| An entropic measure for the teaching–learning process VA Singh, P Pathak, P Pandey Physica A: Statistical Mechanics and its Applications 388 (20), 4453-4458, 2009 | 7 | 2009 |
| Panigrahi PKAutomated error correction in IBM quantum computer and explicit generalizationQuantum Inf D Ghosh, P Agarwal, P Pandey, BK Behera Process, 0 | 7 | |
| Process dependent switching dynamics of ferroelectric hafnium zirconate P Pandey, C Alessandri, AC Seabaugh 2019 Device Research Conference (DRC), 49-50, 2019 | 6 | 2019 |
| DC drain current model for tunnel FETs considering source and drain depletion regions R Vishnoi, P Panday, MJ Kumar 2017 30th International Conference on VLSI Design and 2017 16th …, 2017 | 4 | 2017 |
| Simulation of TFETs JK Mamidala, R Vishnoi, P Pandey Wiley Semiconductors, 2017 | 4 | 2017 |
