| Band anticrossing in GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Physical Review Letters 82 (6), 1221, 1999 | 2094 | 1999 |
| 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ... Applied Physics Letters 93 (12), 2008 | 647 | 2008 |
| High-efficiency GaInP∕ GaAs∕ InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction JF Geisz, S Kurtz, MW Wanlass, JS Ward, A Duda, DJ Friedman, ... Applied Physics Letters 91 (2), 2007 | 547 | 2007 |
| 1-eV solar cells with GaInNAs active layer DJ Friedman, JF Geisz, SR Kurtz, JM Olson Journal of Crystal Growth 195 (1-4), 409-415, 1998 | 498 | 1998 |
| 29.5%‐efficient GaInP/GaAs tandem solar cells KA Bertness, SR Kurtz, DJ Friedman, AE Kibbler, C Kramer, JM Olson Applied Physics Letters 65 (8), 989-991, 1994 | 448 | 1994 |
| III–N–V semiconductors for solar photovoltaic applications JF Geisz, DJ Friedman Semiconductor Science and Technology 17 (8), 769, 2002 | 445 | 2002 |
| Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in with JD Perkins, A Mascarenhas, Y Zhang, JF Geisz, DJ Friedman, JM Olson, ... Physical review letters 82 (16), 3312, 1999 | 435 | 1999 |
| Photocurrent of 1 eV GaInNAs lattice-matched to GaAs JF Geisz, DJ Friedman, JM Olson, SR Kurtz, BM Keyes Journal of Crystal Growth 195 (1-4), 401-408, 1998 | 361 | 1998 |
| Optical enhancement of the open-circuit voltage in high quality GaAs solar cells MA Steiner, JF Geisz, I García, DJ Friedman, A Duda, SR Kurtz Journal of Applied Physics 113 (12), 2013 | 360 | 2013 |
| Thermophotovoltaic efficiency of 40% A LaPotin, KL Schulte, MA Steiner, K Buznitsky, CC Kelsall, DJ Friedman, ... Nature 604 (7905), 287-291, 2022 | 358 | 2022 |
| Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells JF Geisz, MA Steiner, I Garcia, SR Kurtz, DJ Friedman Applied Physics Letters 103 (4), 2013 | 350 | 2013 |
| Structural changes during annealing of GaInAsN S Kurtz, J Webb, L Gedvilas, D Friedman, J Geisz, J Olson, R King, ... Applied Physics Letters 78 (6), 748-750, 2001 | 305 | 2001 |
| Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ... Journal of Applied Physics 101 (11), 2007 | 262 | 2007 |
| Building a six-junction inverted metamorphic concentrator solar cell JF Geisz, MA Steiner, N Jain, KL Schulte, RM France, WE McMahon, ... IEEE Journal of Photovoltaics 8 (2), 626-632, 2017 | 241 | 2017 |
| Progress and challenges for next-generation high-efficiency multijunction solar cells DJ Friedman Current Opinion in Solid State and Materials Science 14 (6), 131-138, 2010 | 241 | 2010 |
| Effect of nitrogen on the band structure of GaInNAs alloys W Shan, W Walukiewicz, JW Ager III, EE Haller, JF Geisz, DJ Friedman, ... Journal of applied physics 86 (4), 2349-2351, 1999 | 224 | 1999 |
| Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge JM Olson, SR Kurtz, DJ Friedman US Patent 6,281,426, 2001 | 219 | 2001 |
| Thermal energy grid storage using multi-junction photovoltaics C Amy, HR Seyf, MA Steiner, DJ Friedman, A Henry Energy & Environmental Science 12 (1), 334-343, 2019 | 203 | 2019 |
| Band anticrossing in III–N–V alloys W Shan, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, JF Geisz, ... physica status solidi (b) 223 (1), 75-85, 2001 | 180 | 2001 |
| Final-state effects in photoelectron diffraction DJ Friedman, CS Fadley Journal of Electron Spectroscopy and Related Phenomena 51, 689-700, 1990 | 179 | 1990 |
John GeiszNational Renewable Energy LaboratoryVerified email at nrel.gov
