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Jan Van Houdt
Jan Van Houdt
imec Fellow, Physics professor at KU Leuven, IEEE Fellow
Verified email at imec.be
Title
Cited by
Cited by
Year
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
3412009
VARIOT: A novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices
B Govoreanu, P Blomme, M Rosmeulen, J Van Houdt, K De Meyer
IEEE Electron Device Letters 24 (2), 99-101, 2003
2522003
Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory
K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018
1952018
Multibit non-volatile memory and method
J Van Houdt, L Haspeslagh
US Patent 6,897,517, 2005
1402005
Trap spectroscopy by charge injection and sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks
R Degraeve, M Cho, B Govoreanu, B Kaczer, MB Zahid, J Van Houdt, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
1242008
Analytical percolation model for predicting anomalous charge loss in flash memories
R Degraeve, F Schuler, B Kaczer, M Lorenzini, D Wellekens, P Hendrickx, ...
IEEE Transactions on Electron Devices 51 (9), 1392-1400, 2004
1132004
Understanding ferroelectric Al: HfO2 thin films with Si-based electrodes for 3D applications
K Florent, S Lavizzari, M Popovici, L Di Piazza, U Celano, G Groeseneken, ...
Journal of Applied Physics 121 (20), 2017
1002017
Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities
B Govoreanu, DP Brunco, J Van Houdt
Solid-State Electronics 49 (11), 1841-1848, 2005
982005
Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications
J Van Houdt, P Heremans, L Deferm, G Groeseneken, HE Maes
IEEE transactions on Electron Devices 39 (5), 1150-1156, 2002
982002
HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications
J Van Houdt, L Haspeslagh, D Wellekens, L Deferm, G Groeseneken, ...
IEEE Transactions on Electron Devices 40 (12), 2255-2263, 2002
892002
Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications
K Florent, S Lavizzari, L Di Piazza, M Popovici, J Duan, G Groeseneken, ...
IEEE Transactions on Electron Devices 64 (10), 4091-4098, 2017
882017
Vertical ferroelectric memory device and a method for manufacturing thereof
J Van Houdt, P Blomme
US Patent 10,211,223, 2019
862019
Low voltage low cost nitride embedded flash memory cell
G Xue, J Van Houdt, D Wellekens, L Haspeslagh, P Hendrickx, J De Vos, ...
812003
A new 2 isolated-bits/cell flash memory device with self aligned split gate structure using ONO stacks for charge storage
L Breuil, F Schuler, L Haspeslagh, D Wellekens, J De Vos, M Lorenzini, ...
722003
SILC-related effects in flash E2PROM's-Part I: a quantitative model for steady-state SILC
J De Blauwe, J Van Houdt, D Wellekens, G Groeseneken, H Maes
711998
Two-Pulse : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks
WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
632008
Analog in-memory computing in FeFET-based 1T1R array for edge AI applications
D Saito, T Kobayashi, H Koga, N Ronchi, K Banerjee, Y Shuto, J Okuno, ...
2021 Symposium on VLSI Technology, 1-2, 2021
622021
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices
A Maconi, A Arreghini, CM Compagnoni, AS Spinelli, J Van Houdt, ...
Solid-State Electronics 74, 64-70, 2012
612012
On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET
MNK Alam, B Kaczer, LÅ Ragnarsson, M Popovici, G Rzepa, N Horiguchi, ...
IEEE Journal of the Electron Devices Society 7, 855-862, 2019
552019
An analytical model for the optimization of source-side injection flash EEPROM devices
JF Van Houdt, G Groeseneken, HE Maes
IEEE transactions on electron devices 42 (7), 1314-1320, 2002
552002
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