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Chen Wu 吴晨
Chen Wu 吴晨
Verified email at imec.be
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Year
Interconnect metals beyond copper: Reliability challenges and opportunities
K Croes, C Adelmann, CJ Wilson, H Zahedmanesh, OV Pedreira, C Wu, ...
2018 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2018
922018
Reliability study on cobalt and ruthenium as alternative metals for advanced interconnects
OV Pedreira, K Croes, A Leśniewska, C Wu, MH Van Der Veen, ...
2017 IEEE international reliability physics symposium (irps), 6B-2.1-6B-2.8, 2017
912017
Electrical reliability challenges of advanced low-k dielectrics
C Wu, Y Li, MR Baklanov, K Croes
ECS Journal of Solid State Science and Technology 4 (1), N3065, 2014
742014
Mechanical stability of porous low-k dielectrics
K Vanstreels, C Wu, MR Baklanov
ECS Journal of Solid State Science and Technology 4 (1), N3058, 2014
642014
Effect of pore structure of nanometer scale porous films on the measured elastic modulus
K Vanstreels, C Wu, M Gonzalez, D Schneider, D Gidley, P Verdonck, ...
Langmuir 29 (38), 12025-12035, 2013
632013
Testing the limits of TaN barrier scaling
C Witt, KB Yeap, A Leśniewska, D Wan, N Jordan, I Ciofi, C Wu, Z Tokei
2018 IEEE international interconnect technology conference (IITC), 54-56, 2018
472018
Low field TDDB of BEOL interconnects using> 40 months of data
K Croes, P Roussel, Y Barbarin, C Wu, Y Li, J Bömmels, Z Tőkei
2013 IEEE International Reliability Physics Symposium (IRPS), 2F. 4.1-2F. 4.8, 2013
462013
Current understanding of BEOL TDDB lifetime models
K Croes, C Wu, D Kocaay, Y Li, P Roussel, J Boemmels, Z Tőkei
ECS Journal of Solid State Science and Technology 4 (1), N3094, 2014
412014
Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow-k dielectrics
K Vanstreels, C Wu, P Verdonck, MR Baklanov
Applied Physics Letters 101 (12), 2012
352012
Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same
C Wu, P Rabkin, M Higashitani
US Patent 11,362,079, 2022
332022
Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics
C Wu, Y Li, I Ciofi, T Kauerauf, J Boemmels, I De Wolf, Z Tőkei, K Croes
Journal of Applied Physics 117 (6), 064101, 2015
27*2015
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
C Wu, P Rabkin, Y Chen, M Higashitani
US Patent 11,037,908, 2021
232021
Bonding pads including interfacial electromigration barrier layers and methods of making the same
C Wu, P Rabkin, M Higashitani
US Patent 11,270,963, 2022
222022
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
C Wu, P Rabkin, Y Chen, M Higashitani
US Patent 11,094,653, 2021
212021
Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same
C Wu, P Rabkin, M Higashitani
US Patent 11,088,116, 2021
212021
Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same
C Wu, P Rabkin, M Higashitani
US Patent 11,004,773, 2021
182021
Cobalt and Ruthenium drift in ultra-thin oxides
D Tierno, OV Pedreira, C Wu, N Jourdan, L Kljucar, Z Tőkei, K Croes
Microelectronics Reliability 100, 113407, 2019
182019
Towards the Understanding of Intrinsic Degradation and Breakdown Mechanisms of a SiOCH Low-k Dielectric
C Wu, Y Li, Y Barbarin, I Ciofi, B Tang, T Kauerauf, K Croes, J Bömmels, ...
Reliability Physics Symposium (IRPS), 2014 IEEE International, 3A-2-1-3A-2-6, 2014
182014
Insights into metal drift induced failure in MOL and BEOL
C Wu, OV Pedreira, A Leśniewska, Y Li, I Ciofi, Z Tőkei, K Croes
2018 IEEE International Reliability Physics Symposium (IRPS), 3A. 1-1-3A. 1-7, 2018
172018
Correlation between field dependent electrical conduction and dielectric breakdown in a SiCOH based low-k (k= 2.0) dielectric
C Wu, Y Li, Y Barbarin, I Ciofi, K Croes, J Bömmels, I De Wolf, Z Tőkei
Applied Physics Letters 103 (3), 2013
172013
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Articles 1–20