| Visible light communications using a directly modulated 422 nm GaN laser diode S Watson, M Tan, SP Najda, P Perlin, M Leszczynski, G Targowski, ... Optics letters 38 (19), 3792-3794, 2013 | 157 | 2013 |
| Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes S Grzanka, G Franssen, G Targowski, K Krowicki, T Suski, R Czernecki, ... Applied Physics Letters 90 (10), 2007 | 76 | 2007 |
| A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN P Kamyczek, E Placzek-Popko, V Kolkovsky, S Grzanka, R Czernecki Journal of Applied Physics 111 (11), 2012 | 66 | 2012 |
| Optimization of InGaN–GaN MQW photodetector structures for high-responsivity performance J Pereiro, C Rivera, Á Navarro, E Muñoz, R Czernecki, S Grzanka, ... IEEE journal of quantum electronics 45 (6), 617-622, 2009 | 66 | 2009 |
| Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates M Kryśko, G Franssen, T Suski, M Albrecht, B Łucznik, I Grzegory, ... Applied Physics Letters 91 (21), 2007 | 54 | 2007 |
| Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes K Sakowski, L Marcinkowski, S Krukowski, S Grzanka, ... Journal of Applied Physics 111 (12), 2012 | 52 | 2012 |
| Continuous-wave operation of (Al, In) GaN distributed-feedback laser diodes with high-order notched gratings TJ Slight, S Stanczyk, S Watson, A Yadav, S Grzanka, E Rafailov, P Perlin, ... Applied Physics Express 11 (11), 112701, 2018 | 51 | 2018 |
| Ni–Au contacts to p-type GaN–Structure and properties J Smalc-Koziorowska, S Grzanka, E Litwin-Staszewska, R Piotrzkowski, ... Solid-state electronics 54 (7), 701-709, 2010 | 50 | 2010 |
| Graded-index separate confinement heterostructure InGaN laser diodes S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ... Applied Physics Letters 103 (26), 2013 | 48 | 2013 |
| Cavity suppression in nitride based superluminescent diodes A Kafar, S Stańczyk, S Grzanka, R Czernecki, M Leszczyński, T Suski, ... Journal of Applied Physics 111 (8), 2012 | 48 | 2012 |
| Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy T Suski, E Litwin-Staszewska, R Piotrzkowski, R Czernecki, M Krysko, ... Applied Physics Letters 93 (17), 2008 | 44 | 2008 |
| Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide G Muziol, H Turski, M Siekacz, S Grzanka, P Perlin, C Skierbiszewski Applied Physics Express 9 (9), 092103, 2016 | 43 | 2016 |
| InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE M Siekacz, MŁ Szańkowska, A Feduniewicz‐Zmuda, ... physica status solidi c 6 (S2 2), S917-S920, 2009 | 42 | 2009 |
| Hydrogen diffusion in GaN: Mg and GaN: Si R Czernecki, E Grzanka, R Jakiela, S Grzanka, C Skierbiszewski, H Turski, ... Journal of Alloys and Compounds 747, 354-358, 2018 | 40 | 2018 |
| Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy G Muziol, H Turski, M Siekacz, P Wolny, S Grzanka, E Grzanka, P Perlin, ... Applied Physics Express 8 (3), 032103, 2015 | 37 | 2015 |
| Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H Turski, M Siekacz, M Sawicka, G Cywinski, M Krysko, S Grzanka, ... Journal of Vacuum Science & Technology B 29 (3), 2011 | 37 | 2011 |
| Control of Mg doping of GaN in RF-plasma molecular beam epitaxy A Feduniewicz, C Skierbiszewski, M Siekacz, ZR Wasilewski, I Sproule, ... Journal of crystal growth 278 (1-4), 443-448, 2005 | 37 | 2005 |
| Role of metal vacancies in the mechanism of thermal degradation of InGaN quantum wells J Smalc-Koziorowska, E Grzanka, A Lachowski, R Hrytsak, M Grabowski, ... ACS Applied Materials & Interfaces 13 (6), 7476-7484, 2021 | 36 | 2021 |
| Growth of thin AlInN∕ GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths G Cywiński, C Skierbiszewski, A Fedunieiwcz-Żmuda, M Siekacz, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 36 | 2006 |
| Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction K Pieniak, M Chlipala, H Turski, W Trzeciakowski, G Muziol, G Staszczak, ... Optics Express 29 (2), 1824-1837, 2021 | 35 | 2021 |
