| Quantum Hall effect in black phosphorus two-dimensional electron system L Li, F Yang, GJ Ye, Z Zhang, Z Zhu, W Lou, X Zhou, L Li, K Watanabe, ... Nature nanotechnology 11 (7), 593-597, 2016 | 522 | 2016 |
| Evidence for a topological excitonic insulator in InAs/GaSb bilayers L Du, X Li, W Lou, G Sullivan, K Chang, J Kono, RR Du Nature communications 8 (1), 1971, 2017 | 220 | 2017 |
| Polarization-Driven Topological Insulator Transition in a Quantum Well MS Miao, Q Yan, CG Van de Walle, WK Lou, LL Li, K Chang Physical review letters 109 (18), 186803, 2012 | 197 | 2012 |
| Landau levels and magneto-transport property of monolayer phosphorene XY Zhou, R Zhang, JP Sun, YL Zou, D Zhang, WK Lou, F Cheng, GH Zhou, ... Scientific reports 5 (1), 12295, 2015 | 186 | 2015 |
| Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells D Zhang, WK Lou, M Miao, S Zhang, K Chang Phys. Rev. Lett. 111, 156402, 2013 | 174 | 2013 |
| Helical quantum states in HgTe quantum dots with inverted band structures K Chang, WK Lou Physical review letters 106 (20), 206802, 2011 | 142 | 2011 |
| Electronic and magneto-optical properties of monolayer phosphorene quantum dots R Zhang, XY Zhou, D Zhang, WK Lou, F Zhai, K Chang 2D Materials 2 (4), 045012, 2015 | 104 | 2015 |
| Tuning Edge States in Strained-Layer Quantum Spin Hall Insulators L Du, T Li, W Lou, X Wu, X Liu, Z Han, C Zhang, G Sullivan, A Ikhlassi, ... Physical review letters 119 (5), 056803, 2017 | 90 | 2017 |
| Excellent photothermal conversion of core/shell CdSe/Bi2Se3 quantum dots GZ Jia, WK Lou, F Cheng, XL Wang, JH Yao, N Dai, HQ Lin, K Chang Nano Research 8 (5), 1443-1453, 2015 | 82 | 2015 |
| Anomalous magneto-optical response of black phosphorus thin films X Zhou, WK Lou, F Zhai, K Chang Physical Review B 92 (16), 165405, 2015 | 80 | 2015 |
| Spin-triplet excitonic insulator: the case of semihydrogenated graphene Z Jiang, W Lou, Y Liu, Y Li, H Song, K Chang, W Duan, S Zhang Physical Review Letters 124 (16), 166401, 2020 | 71 | 2020 |
| Quantum Hall phase in graphene engineered by interfacial charge coupling Y Wang, X Gao, K Yang, P Gu, X Lu, S Zhang, Y Gao, N Ren, B Dong, ... Nature nanotechnology 17 (12), 1272-1279, 2022 | 62 | 2022 |
| Quantum hall effect in electron-doped black phosphorus field-effect transistors F Yang, Z Zhang, NZ Wang, GJ Ye, W Lou, X Zhou, K Watanabe, ... Nano Letters 18 (10), 6611-6616, 2018 | 56 | 2018 |
| Multiband theory of monolayer () M Zhou, R Zhang, J Sun, WK Lou, D Zhang, W Yang, K Chang Physical Review B 96 (15), 155430, 2017 | 41 | 2017 |
| Effective factor in black phosphorus thin films X Zhou, WK Lou, D Zhang, F Cheng, G Zhou, K Chang Physical Review B 95 (4), 045408, 2017 | 37 | 2017 |
| Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy Y Jiang, S Thapa, GD Sanders, CJ Stanton, Q Zhang, J Kono, WK Lou, ... Physical Review B 95 (4), 045116, 2017 | 37 | 2017 |
| Quantum phase transitions driven by sliding in bilayer Y Ren, S Ke, WK Lou, K Chang Physical Review B 106 (23), 235302, 2022 | 29 | 2022 |
| Single-and few-electron states in topological-insulator quantum dots J Li, WK Lou, D Zhang, XJ Li, W Yang, K Chang Physical Review B 90 (11), 115303, 2014 | 29 | 2014 |
| Current-induced spin polarization in monolayer InSe M Zhou, S Yu, W Yang, W Lou, F Cheng, D Zhang, K Chang Physical Review B, 245409, 2019 | 22 | 2019 |
| Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer W Yu, V Clericò, CH Fuentevilla, X Shi, Y Jiang, D Saha, WK Lou, ... New Journal of Physics 20 (5), 053062, 2018 | 21 | 2018 |
Kai ChangCenter for Quantum Matter, School of Physics, Zhejiang University, Hangzhou 310058, ChinaVerified email at semi.ac.cn
