| Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy W Guo, M Zhang, A Banerjee, P Bhattacharya Nano letters 10 (9), 3355-3359, 2010 | 607 | 2010 |
| InGaN/GaN disk-in-nanowire white light emitting diodes on (001) silicon W Guo, A Banerjee, P Bhattacharya, BS Ooi Applied Physics Letters 98 (19), 2011 | 188 | 2011 |
| A InGaN/GaN quantum dot green (λ= 524 nm) laser M Zhang, A Banerjee, CS Lee, JM Hinckley, P Bhattacharya Applied Physics Letters 98 (22), 2011 | 107 | 2011 |
| InGaN/GaN Quantum Dot RedLaser T Frost, A Banerjee, K Sun, SL Chuang, P Bhattacharya IEEE Journal of Quantum Electronics 49 (11), 923-931, 2013 | 99 | 2013 |
| 800 Gbps fully integrated silicon photonics transmitter for data center applications H Yu, D Patel, W Liu, Y Malinge, P Doussiere, W Lin, S Gupta, ... Optical Fiber Communication Conference, M2D. 7, 2022 | 86 | 2022 |
| Misorientation defects in coalesced self-catalyzed GaN nanowires KA Grossklaus, A Banerjee, S Jahangir, P Bhattacharya, JM Millunchick Journal of crystal growth 371, 142-147, 2013 | 63 | 2013 |
| Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions M Zhang, P Bhattacharya, W Guo, A Banerjee Applied Physics Letters 96 (13), 2010 | 60 | 2010 |
| Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts H Kum, J Heo, S Jahangir, A Banerjee, W Guo, P Bhattacharya Applied Physics Letters 100 (18), 2012 | 55 | 2012 |
| Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ= 420 nm) on c-plane GaN substrate A Banerjee, T Frost, E Stark, P Bhattacharya Applied Physics Letters 101 (4), 2012 | 39 | 2012 |
| Polariton Bose–Einstein condensate at room temperature in an Al (Ga) N nanowire–dielectric microcavity with a spatial potential trap A Das, P Bhattacharya, J Heo, A Banerjee, W Guo Proceedings of the National Academy of Sciences 110 (8), 2735-2740, 2013 | 37 | 2013 |
| Spin relaxation in InGaN quantum disks in GaN nanowires A Banerjee, F Dogan, J Heo, A Manchon, W Guo, P Bhattacharya Nano letters 11 (12), 5396-5400, 2011 | 30 | 2011 |
| Carrier collection losses in amorphous silicon and amorphous silicon–germanium alloy solar cells A Banerjee, X Xu, J Yang, S Guha Applied physics letters 67 (20), 2975-2977, 1995 | 30 | 1995 |
| Small-signal modulation and differential gain of red-emitting (λ= 630 nm) InGaN/GaN quantum dot lasers T Frost, A Banerjee, P Bhattacharya Applied Physics Letters 103 (21), 2013 | 25 | 2013 |
| Barrier height of Pt–InxGa1− xN (≤ x≤ 0.5) nanowire Schottky diodes W Guo, A Banerjee, M Zhang, P Bhattacharya Applied Physics Letters 98 (18), 2011 | 25 | 2011 |
| Carrier lifetimes in green emitting InGaN/GaN disks‐in‐nanowire and characteristics of green light emitting diodes S Jahangir, A Banerjee, P Bhattacharya physica status solidi c 10 (5), 812-815, 2013 | 21 | 2013 |
| Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors L Shao, M Zhang, A Banerjee, P Bhattacharya, KP Pipe Applied Physics Letters 99 (24), 2011 | 17 | 2011 |
| Temperature-dependent measurement of Auger recombination in In0. 40Ga0. 60N/GaN red-emitting (λ= 630 nm) quantum dots T Frost, A Banerjee, S Jahangir, P Bhattacharya Applied Physics Letters 104 (8), 2014 | 15 | 2014 |
| Dynamic polariton condensation in a single GaN nanowire-dielectric microcavity A Das, P Bhattacharya, A Banerjee, M Jankowski Physical Review B—Condensed Matter and Materials Physics 85 (19), 195321, 2012 | 15 | 2012 |
| Fuzzy logic based content protection for image resizing by seam carving S Subramanian, K Kumar, BP Mishra, A Banerjee, D Bhattacharya 2008 IEEE Conference on Soft Computing in Industrial Applications, 78-83, 2008 | 15 | 2008 |
| InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy A Banerjee, T Frost, S Jahangir, E Stark, P Bhattacharya Journal of crystal growth 378, 566-570, 2013 | 11 | 2013 |
Wei GuoUniversity of Massachusetts LowellVerified email at uml.edu
