| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 517 | 2022 |
| Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Z Zhang, E Farzana, AR Arehart, SA Ringel Applied Physics Letters 108 (5), 2016 | 422 | 2016 |
| The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells SA Ringel, AW Smith, MH MacDougal, A Rohatgi Journal of applied physics 70 (2), 881-889, 1991 | 260 | 1991 |
| Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ... Applied Physics Letters 84 (3), 374-376, 2004 | 232 | 2004 |
| Influence of metal choice on (010) β-Ga2O3 Schottky diode properties E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel Applied Physics Letters 110 (20), 2017 | 226 | 2017 |
| Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel Journal of Applied physics 98 (5), 2005 | 215 | 2005 |
| Control and elimination of nucleation-related defects in GaP/Si (001) heteroepitaxy TJ Grassman, MR Brenner, S Rajagopalan, R Unocic, R Dehoff, M Mills, ... Applied Physics Letters 94 (23), 2009 | 208 | 2009 |
| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 190 | 2019 |
| Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage MR Lueck, CL Andre, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel IEEE Electron Device Letters 27 (3), 142-144, 2006 | 190 | 2006 |
| Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019 | 185 | 2019 |
| Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019 | 179 | 2019 |
| Impact of dislocation densities on n+∕ p and p+∕ n junction GaAs diodes and solar cells on SiGe virtual substrates CL Andre, DM Wilt, AJ Pitera, ML Lee, EA Fitzgerald, SA Ringel Journal of applied physics 98 (1), 2005 | 179 | 2005 |
| Optically and thermally detected deep levels in n-type Schottky and GaN diodes A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ... Applied Physics Letters 76 (21), 3064-3066, 2000 | 178 | 2000 |
| Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ... Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002 | 177 | 2002 |
| Hydrogen passivation of deep levels in A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars Applied Physics Letters 77 (10), 1499-1501, 2000 | 174 | 2000 |
| Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion RM Sieg, SA Ringel, SM Ting, EA Fitzgerald, RN Sacks Journal of Electronic Materials 27 (7), 900-907, 1998 | 156 | 1998 |
| Nucleation-related defect-free GaP/Si (100) heteroepitaxy via metal-organic chemical vapor deposition TJ Grassman, JA Carlin, B Galiana, LM Yang, F Yang, MJ Mills, SA Ringel Applied Physics Letters 102 (14), 2013 | 153 | 2013 |
| Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020 | 150 | 2020 |
| Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel Apl Materials 7 (2), 2019 | 150 | 2019 |
| Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel Journal of Applied Physics 123 (16), 2018 | 145 | 2018 |
