Jinwoo Hwang

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Jared M JohnsonThe Ohio State UniversityVerified email at thermofisher.com
Hsien-Lien Huang [ORCID:0000-0001...The Ohio State UniversityVerified email at osu.edu
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
Menglin ZhuPostdoctoral Researcher, MITVerified email at mit.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Anhar BhuiyanAssistant Professor | Electrical and Computer Engineering | University of Massachusetts LowellVerified email at uml.edu
Zixuan FengThe Ohio State UniversityVerified email at osu.edu
Paul VoylesUniversity of Wisconsin, MadisonVerified email at wisc.edu
Yuewei ZhangUCSBVerified email at ucsb.edu
Sriram KrishnamoorthyUniversity of California, Santa BarbaraVerified email at ucsb.edu
Jack ZhangUCSBVerified email at umail.ucsb.edu
Chandan JoishiAnalog DevicesVerified email at analog.com
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityVerified email at osu.edu
Baishakhi MazumderUniversity at BuffaloVerified email at buffalo.edu
Soohyun ImThe State University of New York at BuffaloVerified email at buffalo.edu
Ambrose SeoUniversity of KentuckyVerified email at uky.edu
Matthew J. KramerDistinguished Scientist, Materials Sciences and Engineering, Ames National LaboratoryVerified email at ameslab.gov
Donald StoneMaterials Science and Engineering, University of WisconsinVerified email at wisc.edu
Sanyam BajajIntel CorporationVerified email at intel.com
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu

Jinwoo Hwang

Professor, Materials Science and Engineering, Ohio State University

Verified email at osu.edu - Homepage

Materials Science Electron Microscopy Nanotechnology


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Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017	690	2017
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	457	2018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	360	2017
Nanoscale Structure and Structural Relaxation in Bulk Metallic Glass J Hwang, ZH Melgarejo, YE Kalay, I Kalay, MJ Kramer, DS Stone, ... Physical review letters 108 (19), 195505, 2012	261	2012
Tailoring binding abilities by incorporating oxophilic transition metals on 3D nanostructured Ni arrays for accelerated alkaline hydrogen evolution reaction J Kim, H Jung, SM Jung, J Hwang, DY Kim, N Lee, KS Kim, H Kwon, ... Journal of the American Chemical Society 143 (3), 1399-1408, 2020	251	2020
Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe₂ IH Kao, R Muzzio, H Zhang, M Zhu, J Gobbo, S Yuan, D Weber, R Rao, ... Nature materials 21 (9), 1029-1034, 2022	216	2022
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	198	2019
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ... Physical Review X 9 (4), 041027, 2019	185	2019
Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films Y Cheng, S Yu, M Zhu, J Hwang, F Yang Physical Review Letters 124 (2), 027202, 2020	172	2020
LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates S Rafique, MR Karim, JM Johnson, J Hwang, H Zhao Applied physics letters 112 (5), 2018	164	2018
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	162	2020
Three-dimensional imaging of individual dopant atoms in SrTiO3 J Hwang, JY Zhang, AJ D’Alfonso, LJ Allen, S Stemmer Physical review letters 111 (26), 2013	116	2013
β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021	111	2021
Structural origins of the properties of rare earth nickelate superlattices J Hwang, J Son, JY Zhang, A Janotti, CG Van de Walle, S Stemmer Physical Review B—Condensed Matter and Materials Physics 87 (6), 060101, 2013	108	2013
Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015	107	2015
Ga₂O₃-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ... ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021	104	2021
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018	97	2018
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates CH Lee, S Krishnamoorthy, DJ O'Hara, MR Brenner, JM Johnson, ... Journal of Applied Physics 121 (9), 2017	97	2017
Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO P Moetakef, CA Jackson, J Hwang, L Balents, SJ Allen, S Stemmer Physical Review B—Condensed Matter and Materials Physics 86 (20), 201102, 2012	97	2012
Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size J Hwang, PM Voyles Microscopy and Microanalysis 17 (1), 67-74, 2011	93	2011

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