| Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup+/n junctions F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Sciortino, S Lagomarsino, ... IEEE transactions on nuclear science 53 (3), 1557-1563, 2006 | 81 | 2006 |
| Nitrogen implantation to improve electron channel mobility in 4H-SiC MOSFET F Moscatelli, A Poggi, S Solmi, R Nipoti IEEE Transactions on Electron Devices 55 (4), 961-967, 2008 | 70 | 2008 |
| Permeated porous silicon for hydrocarbon sensor fabrication R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, A Tagliani, ... Sensors and Actuators A: Physical 74 (1-3), 95-99, 1999 | 68 | 1999 |
| Growth and characterization of 3C-SiC films for micro electro mechanical systems (MEMS) applications M Bosi, BE Watts, G Attolini, C Ferrari, C Frigeri, G Salviati, A Poggi, ... Crystal growth & design 9 (11), 4852-4859, 2009 | 46 | 2009 |
| Composition and structure of tin/vanadium oxide surfaces for chemical sensing applications A Lavacchi, B Cortigiani, G Rovida, U Bardi, A Atrei, R Angelucci, L Dori, ... Sensors and Actuators B: Chemical 71 (1-2), 123-126, 2000 | 44 | 2000 |
| Analysis of electron traps at the 4H–SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, ... Journal of Applied Physics 108 (2), 2010 | 38 | 2010 |
| Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors F Moscatelli, A Scorzoni, A Poggi, M Bruzzi, S Lagomarsino, S Mersi, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 37 | 2005 |
| Thick oxidised porous silicon layer as a thermo-insulating membrane for high-temperature operating thin-and thick-film gas sensors P Maccagnani, R Angelucci, P Pozzi, A Poggi, L Dori, GC Cardinali, ... Sensors and Actuators B: Chemical 49 (1-2), 22-29, 1998 | 37 | 1998 |
| Effects of heating ramp rates on the characteristics of Al implanted 4H–SiC junctions A Poggi, F Bergamini, R Nipoti, S Solmi, M Canino, A Carnera Applied physics letters 88 (16), 2006 | 36 | 2006 |
| TEM characterisation of porous silicon A Parisini, R Angelucci, L Dori, A Poggi, P Maccagnani, GC Cardinali, ... Micron 31 (3), 223-230, 2000 | 35 | 2000 |
| Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, R Nipoti Semiconductor science and technology 18 (6), 554, 2003 | 34 | 2003 |
| Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs A Poggi, F Moscatelli, S Solmi, R Nipoti IEEE transactions on electron devices 55 (8), 2021-2028, 2008 | 33 | 2008 |
| Porous silicon layer permeated with Sn–V mixed oxides for hydrocarbon sensor fabrication R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, G Pizzochero, ... Thin solid films 297 (1-2), 43-47, 1997 | 32 | 1997 |
| MOS capacitors obtained by wet oxidation of n-type 4H–SiC pre-implanted with nitrogen A Poggi, F Moscatelli, Y Hijikata, S Solmi, R Nipoti Microelectronic Engineering 84 (12), 2804-2809, 2007 | 31 | 2007 |
| Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel A Poggi, F Moscatelli, S Solmi, A Armigliato, L Belsito, R Nipoti Journal of Applied Physics 107 (4), 2010 | 30 | 2010 |
| Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC. R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ... MRS Online Proceedings Library (OPL) 742, K6. 2, 2002 | 29 | 2002 |
| Permeated porous silicon suspended membrane as sub-ppm benzene sensor for air quality monitoring R Angelucci, A Poggi, L Dori, A Tagliani, GC Cardinali, F Corticelli, ... Journal of porous materials 7 (1), 197-200, 2000 | 29 | 2000 |
| Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography S Mengali, N Liberatore, D Luciani, R Viola, GC Cardinali, I Elmi, A Poggi, ... Quantum Sensing and Nanophotonic Devices X 8631, 489-498, 2013 | 25 | 2013 |
| A comparative study of high-temperature aluminum post-implantation annealing in 6H-and 4H-SiC, non-uniform temperature effects L Ottaviani Materials Science Forum, 2002 | 19 | 2002 |
| Microstructural development in pure and V-doped SnO2 nanopowders L Sangaletti, LE Depero, B Allieri, F Pioselli, R Angelucci, A Poggi, ... Journal of the European Ceramic Society 19 (12), 2073-2077, 1999 | 19 | 1999 |
