| Study of silver diffusion in silicon carbide E Friedland, JB Malherbe, NG Van der Berg, T Hlatshwayo, AJ Botha, ... Journal of Nuclear Materials 389 (2), 326-331, 2009 | 145 | 2009 |
| Effects of annealing time on the structure and optical properties of ZnAl2O4/ZnO prepared via citrate sol-gel process SV Motloung, P Kumari, LF Koao, TE Motaung, TT Hlatshwayo, ... Materials Today Communications 14, 294-301, 2018 | 56 | 2018 |
| Annealing of silver implanted 6H–SiC and the diffusion of the silver TT Hlatshwayo, JB Malherbe, NG Van Der Berg, LC Prinsloo, AJ Botha, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 46 | 2012 |
| Evaluating the antimicrobial activity and cytotoxicity of polydopamine capped silver and silver/polydopamine core-shell nanocomposites NP Shumbula, SS Nkabinde, ZB Ndala, S Mpelane, MP Shumbula, ... Arabian Journal of Chemistry 15 (6), 103798, 2022 | 37 | 2022 |
| Effect of Tb3+ concentration on the structure and optical properties of triply doped ZnAl2O4: 1% Ce3+, 1% Eu3+, x% Tb3+ nano-phosphors synthesized via citrate sol-gel method SV Motloung, KG Tshabalala, RE Kroon, TT Hlatshwayo, M Mlambo, ... Journal of Molecular Structure 1175, 241-252, 2019 | 37 | 2019 |
| Annealing effects on the migration of ion-implanted cadmium in glassy carbon TT Hlatshwayo, LD Sebitla, EG Njoroge, M Mlambo, JB Malherbe Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 36 | 2017 |
| The new Heavy Ion ERDA set up at iThemba LABS Gauteng: Multilayer thin film depth profiling using direct calculation and Monte Carlo simulation codes M Msimanga, D Wamwangi, CM Comrie, CA Pineda-Vargas, M Nkosi, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013 | 35 | 2013 |
| Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods BS Mwankemwa, FJ Nambala, F Kyeyune, TT Hlatshwayo, JM Nel, ... Materials Science in Semiconductor Processing 71, 209-216, 2017 | 33 | 2017 |
| Diffusion of a mono-energetic implanted species with a Gaussian profile JB Malherbe, PA Selyshchev, OS Odutemowo, CC Theron, EG Njoroge, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 33 | 2017 |
| Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature TT Hlatshwayo, JH O’Connell, VA Skuratov, M Msimanga, RJ Kuhudzai, ... Journal of Physics D: Applied Physics 48 (46), 465306, 2015 | 30 | 2015 |
| SEM analysis of ion implanted SiC JB Malherbe, NG Van Der Berg, AJ Botha, E Friedland, TT Hlatshwayo, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013 | 29 | 2013 |
| Diffusion behavior of cesium in silicon carbide at T> 1000 C E Friedland, NG Van Der Berg, TT Hlatshwayo, RJ Kuhudzai, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 29 | 2012 |
| Effect of thermal annealing and neutron irradiation in 6H-SiC implanted with silver at 350 C and 600 C TT Hlatshwayo, JB Malherbe, NG Van Der Berg, AJ Botha, P Chakraborty Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 29 | 2012 |
| Citrate sol-gel synthesis of BaAl2O4: x% Cu2+ (0≤ x≤ 1) nano-phosphors: structural, morphological and photoluminescence properties VM Maphiri, MR Mhlongo, TT Hlatshwayo, TE Motaung, LF Koao, ... Optical Materials 109, 110244, 2020 | 27 | 2020 |
| Ion bombardment of glassy carbon JB Malherbe, OS Odutemowo, EG Njoroge, DF Langa, TT Hlatshwayo, ... Vacuum 149, 19-22, 2018 | 27 | 2018 |
| Structural modification of indium implanted glassy carbon by thermal annealing and SHI irradiation EG Njoroge, LD Sebitla, CC Theron, M Mlambo, TT Hlatshwayo, ... Vacuum 144, 63-71, 2017 | 26 | 2017 |
| Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis MJ Madito, TT Hlatshwayo, CB Mtshali Applied Surface Science 538, 148099, 2021 | 25 | 2021 |
| Influence of radiation damage on diffusion of fission products in silicon carbide E Friedland, T Hlatshwayo, N Van der Berg physica status solidi c 10 (2), 208-215, 2013 | 25 | 2013 |
| Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC MJ Madito, TT Hlatshwayo, VA Skuratov, CB Mtshali, N Manyala, ... Applied Surface Science 493, 1291-1298, 2019 | 24 | 2019 |
| Defects in swift heavy ion irradiated n-4H-SiC SM Tunhuma, M Diale, JM Nel, MJ Madito, TT Hlatshwayo, FD Auret Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | 23 | 2019 |
