| Deep donor levels (DX centers) in III‐V semiconductors PM Mooney Journal of Applied Physics 67 (3), R1-R26, 1990 | 1155 | 1990 |
| Measurements of alloy composition and strain in thin GexSi1−x layers JC Tsang, PM Mooney, F Dacol, JO Chu Journal of applied physics 75 (12), 8098-8108, 1994 | 574 | 1994 |
| High performance CMOS fabricated on hybrid substrate with different crystal orientations M Yang, M Ieong, L Shi, K Chan, V Chan, A Chou, E Gusev, K Jenkins, ... IEEE International Electron Devices Meeting 2003, 18.7. 1-18.7. 4, 2003 | 451 | 2003 |
| Characteristics and device design of sub-100 nm strained Si N-and PMOSFETs K Rim, J Chu, H Chen, KA Jenkins, T Kanarsky, K Lee, A Mocuta, H Zhu, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 375 | 2002 |
| Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons PM Mooney, LJ Cheng, M Süli, JD Gerson, JW Corbett Physical Review B 15 (8), 3836, 1977 | 370 | 1977 |
| Controllable valley splitting in silicon quantum devices S Goswami, KA Slinker, M Friesen, LM McGuire, JL Truitt, C Tahan, ... Nature Physics 3 (1), 41-45, 2007 | 365 | 2007 |
| Strained Si NMOSFETs for high performance CMOS technology K Rim, S Koester, M Hargrove, J Chu, PM Mooney, J Ott, T Kanarsky, ... 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001 | 345 | 2001 |
| High speed composite p-channel Si/SiGe heterostructure for field effect devices JO Chu, R Hammond, KEE Ismail, SJ Koester, PM Mooney, JA Ott US Patent 6,350,993, 2002 | 264 | 2002 |
| Influence of misfit dislocations on the surface morphology of Si1− xGex films MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu Applied Physics Letters 66 (6), 724-726, 1995 | 238 | 1995 |
| Electron Localization by a Metastable Donor Level in n− GaAs: A New Mechanism Limiting the Free-Carrier Density TN Theis, PM Mooney, SL Wright Physical review letters 60 (4), 361, 1988 | 222 | 1988 |
| Energy dependence of deep level introduction in electron irradiated GaAs D Pons, PM Mooney, JC Bourgoin J. Appl. Phys.;(United States) 51 (4), 1980 | 209 | 1980 |
| Strain relaxation and dislocations in SiGe/Si structures PM Mooney Materials Science and Engineering: R: Reports 17 (3), 105-146, 1996 | 197 | 1996 |
| Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors TF Kuech, DJ Wolford, E Veuhoff, V Deline, PM Mooney, R Potemski, ... Journal of applied physics 62 (2), 632-643, 1987 | 195 | 1987 |
| Raman scattering analysis of relaxed GexSi1−x alloy layers PM Mooney, FH Dacol, JC Tsang, JO Chu Applied Physics Letters 62 (17), 2069-2071, 1993 | 180 | 1993 |
| Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures K Ismail, FK LeGoues, KL Saenger, M Arafa, JO Chu, PM Mooney, ... Physical review letters 73 (25), 3447, 1994 | 179 | 1994 |
| The capture barrier of the DX center in Si‐doped AlxGa1−xAs PM Mooney, NS Caswell, SL Wright Journal of applied physics 62 (12), 4786-4797, 1987 | 173 | 1987 |
| Spin-based quantum dot quantum computing in silicon MA Eriksson, M Friesen, SN Coppersmith, R Joynt, LJ Klein, K Slinker, ... Quantum Information Processing 3 (1), 133-146, 2004 | 158 | 2004 |
| Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same SH Christiansen, A Grill, PM Mooney US Patent 6,515,335, 2003 | 144 | 2003 |
| Evidence for large lattice relaxation at the DX center in Si-doped Al x Ga 1− x As PM Mooney, GA Northrop, TN Morgan, HG Grimmeiss Physical Review B 37 (14), 8298, 1988 | 142 | 1988 |
| Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing SH Christiansen, JO Chu, A Grill, PM Mooney US Patent 6,593,625, 2003 | 138 | 2003 |
