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bobo tian
bobo tian
Shanghai Institute of Technical Physics,Chinese Academy of Sciences
Verified email at mail.sitp.ac.cn
Title
Cited by
Cited by
Year
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
G Wu, B Tian, L Liu, W Lv, S Wu, X Wang, Y Chen, J Li, Z Wang, S Wu, ...
Nature Electronics 3 (1), 43-50, 2020
2852020
Research progress on solutions to the sneak path issue in memristor crossbar arrays
L Shi, G Zheng, B Tian, B Dkhil, C Duan
Nanoscale Advances 2 (5), 1811-1827, 2020
2712020
Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
G Wu, X Zhang, G Feng, J Wang, K Zhou, J Zeng, D Dong, F Zhu, C Yang, ...
Nature Materials 22 (12), 1499-1506, 2023
2222023
A robust artificial synapse based on organic ferroelectric polymer
B Tian, L Liu, M Yan, J Wang, Q Zhao, N Zhong, P Xiang, L Sun, H Peng, ...
Advanced Electronic Materials 5 (1), 1800600, 2019
2032019
Characterization and application of PVDF and its copolymer films prepared by spin-coating and Langmuir–Blodgett method
Z Yin, B Tian, Q Zhu, C Duan
Polymers 11 (12), 2033, 2019
1882019
Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision
B Cui, Z Fan, W Li, Y Chen, S Dong, Z Tan, S Cheng, B Tian, R Tao, ...
Nature Communications 13 (1), 1707, 2022
1872022
Ultralow‐power machine vision with self‐powered sensor reservoir
J Lao, M Yan, B Tian, C Jiang, C Luo, Z Xie, Q Zhu, Z Bao, N Zhong, ...
Advanced Science 9 (15), 2106092, 2022
1702022
Size Effect on Optical and Photocatalytic Properties in BiFeO3 Nanoparticles
X Bai, J Wei, B Tian, Y Liu, T Reiss, N Guiblin, P Gemeiner, B Dkhil, ...
The Journal of Physical Chemistry C 120 (7), 3595-3601, 2016
1592016
Tunnel electroresistance through organic ferroelectrics
BB Tian, JL Wang, S Fusil, Y Liu, XL Zhao, S Sun, H Shen, T Lin, JL Sun, ...
Nature communications 7 (1), 11502, 2016
1542016
Flexible vertical photogating transistor network with an ultrashort channel for in‐sensor visual nociceptor
G Feng, J Jiang, Y Li, D Xie, B Tian, Q Wan
Advanced Functional Materials 31 (36), 2104327, 2021
1522021
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
X Wang, C Liu, Y Chen, G Wu, X Yan, H Huang, P Wang, B Tian, Z Hong, ...
2D Materials 4 (2), 025036, 2017
1222017
Porous Metal–Organic Framework/ReS2 Heterojunction Phototransistor for Polarization‐Sensitive Visual Adaptation Emulation
D Xie, G Gao, B Tian, Z Shu, H Duan, WW Zhao, J He, J Jiang
Advanced Materials 35 (26), 2212118, 2023
1032023
Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network
Y Chen, Y Zhou, F Zhuge, B Tian, M Yan, Y Li, Y He, XS Miao
npj 2D Materials and Applications 3 (1), 31, 2019
1002019
Ferroelectric synaptic transistor network for associative memory
M Yan, Q Zhu, S Wang, Y Ren, G Feng, L Liu, H Peng, Y He, J Wang, ...
Advanced Electronic Materials 7 (4), 2001276, 2021
972021
Two-dimensional ferroelectric tunnel junction: the case of monolayer In: SnSe/SnSe/Sb: SnSe homostructure
XW Shen, YW Fang, BB Tian, CG Duan
ACS Applied Electronic Materials 1 (7), 1133-1140, 2019
972019
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
Y Chen, X Wang, P Wang, H Huang, G Wu, B Tian, Z Hong, Y Wang, ...
ACS applied materials & interfaces 8 (47), 32083-32088, 2016
952016
An air-stable artificial synapse based on a lead-free double perovskite Cs 2 AgBiBr 6 film for neuromorphic computing
J Lao, W Xu, C Jiang, N Zhong, B Tian, H Lin, C Luo, J Travas-sejdic, ...
Journal of Materials Chemistry C 9 (17), 5706-5712, 2021
892021
Ferroelectric polymers for neuromorphic computing
X Niu, B Tian, Q Zhu, B Dkhil, C Duan
Applied Physics Reviews 9 (2), 2022
832022
Retinomorphic hardware for in‐sensor computing
G Feng, X Zhang, B Tian, C Duan
InfoMat 5 (9), e12473, 2023
752023
Solid-state synapse based on magnetoelectrically coupled memristor
W Huang, YW Fang, Y Yin, B Tian, W Zhao, C Hou, C Ma, Q Li, ...
ACS applied materials & interfaces 10 (6), 5649-5656, 2018
732018
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