| Flexible light-emitting diodes based on vertical nitride nanowires X Dai, A Messanvi, H Zhang, C Durand, J Eymery, C Bougerol, FH Julien, ... Nano letters 15 (10), 6958-6964, 2015 | 260 | 2015 |
| InGaN/GaN core–shell single nanowire light emitting diodes with graphene-based p-contact M Tchernycheva, P Lavenus, H Zhang, AV Babichev, G Jacopin, ... Nano letters 14 (5), 2456-2465, 2014 | 220 | 2014 |
| Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors M Tchernycheva, A Messanvi, A de Luna Bugallo, G Jacopin, P Lavenus, ... Nano letters 14 (6), 3515-3520, 2014 | 217 | 2014 |
| GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ... Applied Physics Letters 103 (20), 2013 | 173 | 2013 |
| Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact H Zhang, AV Babichev, G Jacopin, P Lavenus, FH Julien, A Yu Egorov, ... Journal of Applied Physics 114 (23), 2013 | 151 | 2013 |
| Epitaxy of GaN nanowires on graphene V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ... Nano letters 16 (8), 4895-4902, 2016 | 146 | 2016 |
| Flexible white light emitting diodes based on nitride nanowires and nanophosphors N Guan, X Dai, A Messanvi, H Zhang, J Yan, E Gautier, C Bougerol, ... ACS photonics 3 (4), 597-603, 2016 | 125 | 2016 |
| Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping M Tchernycheva, V Neplokh, H Zhang, P Lavenus, L Rigutti, F Bayle, ... Nanoscale 7 (27), 11692-11701, 2015 | 90 | 2015 |
| Flexible photodiodes based on nitride core/shell p–n junction nanowires H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ... ACS applied materials & interfaces 8 (39), 26198-26206, 2016 | 89 | 2016 |
| Experimental and theoretical analysis of transport properties of core–shell wire light emitting diodes probed by electron beam induced current microscopy P Lavenus, A Messanvi, L Rigutti, ADL Bugallo, H Zhang, F Bayle, ... Nanotechnology 25 (25), 255201, 2014 | 58 | 2014 |
| Self-induced growth of vertical GaN nanowires on silica V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ... Nanotechnology 27 (13), 135602, 2016 | 47 | 2016 |
| Investigation of photovoltaic properties of single core–shell GaN/InGaN wires A Messanvi, H Zhang, V Neplokh, FH Julien, F Bayle, M Foldyna, ... ACS Applied Materials & Interfaces 7 (39), 21898-21906, 2015 | 45 | 2015 |
| Excitonic diffusion in InGaN/GaN core–shell nanowires M Shahmohammadi, JD Ganière, H Zhang, R Ciechonski, G Vescovi, ... Nano letters 16 (1), 243-249, 2016 | 40 | 2016 |
| Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment H Zhang, G Jacopin, V Neplokh, L Largeau, FH Julien, O Kryliouk, ... Nanotechnology 26 (46), 465203, 2015 | 33 | 2015 |
| Comprehensive analyses of core–shell InGaN/GaN single nanowire photodiodes H Zhang, N Guan, V Piazza, A Kapoor, C Bougerol, FH Julien, ... Journal of Physics D: Applied Physics 50 (48), 484001, 2017 | 23 | 2017 |
| Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere Y Liu, X Xia, H Liang, H Zhang, J Bian, Y Liu, R Shen, Y Luo, G Du Journal of Materials Science: Materials in Electronics 23 (2), 542-545, 2012 | 23 | 2012 |
| InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection H Zhang, A Messanvi, C Durand, J Eymery, P Lavenus, A Babichev, ... physica status solidi (a) 213 (4), 936-940, 2016 | 22 | 2016 |
| Substrate-free InGaN/GaN nanowire light-emitting diodes V Neplokh, A Messanvi, H Zhang, FH Julien, A Babichev, J Eymery, ... Nanoscale Research Letters 10 (1), 447, 2015 | 22 | 2015 |
| Short cavity InGaN-based laser diodes with cavity length below 300μm RBNG Hezhi Zhang, Ching-Wen Shih, Denis Martin, Alexander Caut, Jean ... semiconductor science and technology, 085005, 2019 | 19 | 2019 |
| Heteroepitaxial β-Ga2O3 thick films on sapphire substrate by carbothermal reduction rapid growth method W Zhang, H Zhang, Z Zhang, Q Zhang, X Hu, H Liang Semiconductor Science and Technology 37 (8), 085014, 2022 | 12 | 2022 |
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris SaclayVerified email at u-psud.fr
