| Electronic Properties of MoS2–WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy K Chen, X Wan, J Wen, W Xie, Z Kang, X Zeng, H Chen, JB Xu ACS nano 9 (10), 9868-9876, 2015 | 361 | 2015 |
| 1T′ transition metal telluride atomic layers for plasmon-free SERS at femtomolar levels L Tao, K Chen, Z Chen, C Cong, C Qiu, J Chen, X Wang, H Chen, T Yu, ... Journal of the American Chemical Society 140 (28), 8696-8704, 2018 | 272 | 2018 |
| Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy K Chen, X Wan, W Xie, J Wen, Z Kang, X Zeng, H Chen, J Xu Advanced materials 27 (41), 6431-6437, 2015 | 250 | 2015 |
| Graphene controlled Brewster angle device for ultra broadband terahertz modulation Z Chen, X Chen, L Tao, K Chen, M Long, X Liu, K Yan, RI Stantchev, ... Nature communications 9 (1), 4909, 2018 | 193 | 2018 |
| High-quality large-area graphene from dehydrogenated polycyclic aromatic hydrocarbons X Wan, K Chen, D Liu, J Chen, Q Miao, J Xu Chemistry of Materials 24 (20), 3906-3915, 2012 | 159 | 2012 |
| Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries L Tao, K Chen, Z Chen, W Chen, X Gui, H Chen, X Li, JB Xu ACS applied materials & interfaces 9 (13), 12073-12081, 2017 | 154 | 2017 |
| A Simple Method for Synthesis of High‐Quality Millimeter‐Scale 1T′ Transition‐Metal Telluride and Near‐Field Nanooptical Properties K Chen, Z Chen, X Wan, Z Zheng, F Xie, W Chen, X Gui, H Chen, W Xie, ... Advanced Materials 29 (38), 1700704, 2017 | 141 | 2017 |
| Synthesis and characterization of metallic Janus MoSH monolayer X Wan, EZ Chen, J Yao, M Gao, X Miao, S Wang, Y Gu, S Xiao, R Zhan, ... ACS nano 15 (12), 20319-20331, 2021 | 125 | 2021 |
| Trapping and assembling of particles and live cells on large-scale random gold nano-island substrates Z Kang, J Chen, SY Wu, K Chen, SK Kong, KT Yong, HP Ho Scientific reports 5 (1), 9978, 2015 | 94 | 2015 |
| Epitaxial stitching and stacking growth of atomically thin transition‐metal dichalcogenides (TMDCs) heterojunctions K Chen, X Wan, J Xu Advanced Functional Materials 27 (19), 1603884, 2017 | 88 | 2017 |
| Controlled Electrochemical Deposition of Large-Area MoS2 on Graphene for High-Responsivity Photodetectors X. Wan, K. Chen, Z. F. Chen, F. Y. Xie, X. L. Zeng, W. G. Xie, J. Chen Adv. Funct. Mater 27, 1603998, 2017 | 68 | 2017 |
| Theoretical study of BexZn1-xO alloys SF Ding, GH Fan, ST Li, K Chen, B Xiao Physica B: Condensed Matter 394 (1), 127-131, 2007 | 67 | 2007 |
| In situ ultrafast and patterned growth of transition metal dichalcogenides from inkjet‐printed aqueous precursors X Wan, X Miao, J Yao, S Wang, F Shao, S Xiao, R Zhan, K Chen, X Zeng, ... Advanced Materials 33 (16), 2100260, 2021 | 57 | 2021 |
| Plasmonic graded nano-disks as nano-optical conveyor belt Z Kang, H Lu, J Chen, K Chen, F Xu, HP Ho Optics express 22 (16), 19567-19572, 2014 | 44 | 2014 |
| Enhanced performance and fermi-level estimation of coronene-derived graphene transistors on self-assembled monolayer modified substrates in large areas X Wan, K Chen, J Du, D Liu, J Chen, X Lai, W Xie, J Xu The Journal of Physical Chemistry C 117 (9), 4800-4807, 2013 | 42 | 2013 |
| Interface engineering for CVD graphene: current status and progress X Wan, K Chen, J Xu Small 10 (22), 4443-4454, 2014 | 40 | 2014 |
| N 掺杂 p-型 ZnO 的第一性原理计算 陈琨， 范广涵， 章勇， 丁少锋 物理化学学报 24 (01), 61-66, 2008 | 40 | 2008 |
| Quantitative analysis of scattering mechanisms in highly crystalline CVD MoS2 through a self-limited growth strategy by interface engineering X Wan, K Chen, W Xie, J Wen, H Chen, JB Xu Small (Weinheim an der Bergstrasse, Germany) 12 (4), 438-445, 2016 | 38 | 2016 |
| Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature K Chen, X Wan, D Liu, Z Kang, W Xie, J Chen, Q Miao, J Xu Nanoscale 5 (13), 5784-5793, 2013 | 36 | 2013 |
| Electronic properties of graphene altered by substrate surface chemistry and externally applied electric field K Chen, X Wang, JB Xu, L Pan, X Wang, Y Shi The Journal of Physical Chemistry C 116 (10), 6259-6267, 2012 | 35 | 2012 |
Jian-Bin XU (许建斌)Chinese University of Hong Kong (CUHK); Shenzhen Institutes of Advanced Technology (SIAT), CASVerified email at ee.cuhk.edu.hk
