| Energetics of self-interstitial clusters in Si NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ... Physical Review Letters 82 (22), 4460, 1999 | 422 | 1999 |
| Extended defects in shallow implants A Claverie, B Colombeau, B De Mauduit, C Bonafos, X Hebras, ... Applied Physics A 76 (7), 1025-1033, 2003 | 193 | 2003 |
| Engineering strained silicon on insulator wafers with the Smart CutTM technology B Ghyselen, JM Hartmann, T Ernst, C Aulnette, B Osternaud, ... Solid-state electronics 48 (8), 1285-1296, 2004 | 169 | 2004 |
| Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions BJ Pawlak, R Surdeanu, B Colombeau, AJ Smith, NEB Cowern, ... Applied Physics Letters 84 (12), 2055-2057, 2004 | 132 | 2004 |
| Formation energies and relative stability of perfect and faulted dislocation loops in silicon F Cristiano, J Grisolia, B Colombeau, M Omri, B De Mauduit, A Claverie, ... Journal of Applied Physics 87 (12), 8420-8428, 2000 | 130 | 2000 |
| Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation T Komoda, J Kelly, F Cristiano, A Nejim, PLF Hemment, KP Homewood, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 105 | 1995 |
| Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ... IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015 | 102 | 2015 |
| Mechanisms of B deactivation control by F co-implantation NEB Cowern, B Colombeau, J Benson, AJ Smith, W Lerch, S Paul, T Graf, ... Applied Physics Letters 86 (10), 2005 | 94 | 2005 |
| A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon CJ Ortiz, P Pichler, T Fühner, F Cristiano, B Colombeau, NEB Cowern, ... Journal of applied physics 96 (9), 4866-4877, 2004 | 87 | 2004 |
| Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion A Claverie, B Colombeau, GB Assayag, C Bonafos, F Cristiano, M Omri, ... Materials Science in Semiconductor Processing 3 (4), 269-277, 2000 | 85 | 2000 |
| Clusters formation in ultralow-energy high-dose boron-implanted silicon F Cristiano, X Hebras, N Cherkashin, A Claverie, W Lerch, S Paul Applied physics letters 83 (26), 5407-5409, 2003 | 81 | 2003 |
| Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices JM Hartmann, Y Bogumilowicz, P Holliger, F Laugier, R Truche, ... Semiconductor science and technology 19 (3), 311, 2003 | 64 | 2003 |
| Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 62 | 2014 |
| Direct imaging of boron segregation to extended defects in silicon S Duguay, T Philippe, F Cristiano, D Blavette Applied Physics Letters 97 (24), 2010 | 62 | 2010 |
| Ion beam induced defects in crystalline silicon F Cristiano, N Cherkashin, X Hebras, P Calvo, Y Lamrani, E Scheid, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 60 | 2004 |
| Advanced activation of ultra-shallow junctions using flash-assisted RTP W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ... Materials Science and Engineering: B 124, 24-31, 2005 | 58* | 2005 |
| Kinetic aspects of the growth of platelets and voids in H implanted Si J Grisolia, F Cristiano, GB Assayag, A Claverie Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2001 | 57 | 2001 |
| Defect evolution and dopant activation in laser annealed Si and Ge F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ... Materials Science in Semiconductor Processing 42, 188-195, 2016 | 54 | 2016 |
| Detailed investigation of Ge–Si interdiffusion in the full range of Si1− xGex (≤ x≤ 1) composition M Gavelle, EM Bazizi, E Scheid, PF Fazzini, F Cristiano, C Armand, ... Journal of Applied Physics 104 (11), 2008 | 51 | 2008 |
| Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans JA Sharp, NEB Cowern, RP Webb, KJ Kirkby, D Giubertoni, S Gennaro, ... Applied physics letters 89 (19), 2006 | 49 | 2006 |
