| Mechanisms behind green photoluminescence in ZnO phosphor powders K Vanheusden, WL Warren, CH Seager, DR Tallant, JA Voigt, BE Gnade Journal of applied physics 79 (10), 7983-7990, 1996 | 4610 | 1996 |
| Porous dielectric material with improved pore surface properties for electronics applications CC Cho, BE Gnade, DM Smith US Patent 5,504,042, 1996 | 638 | 1996 |
| Porous dielectric material with improved pore surface properties for electronics applications CC Cho, BE Gnade, DM Smith, J Changming, WC Ackerman, ... US Patent 6,140,252, 2000 | 603 | 2000 |
| Fabrication of Silver Vanadium Oxide and V2O5 Nanowires for Electrochromics C Xiong, AE Aliev, B Gnade, KJ Balkus Jr ACS nano 2 (2), 293-301, 2008 | 365 | 2008 |
| Cowpea mosaic virus as a scaffold for 3-D patterning of gold nanoparticles AS Blum, CM Soto, CD Wilson, JD Cole, M Kim, B Gnade, A Chatterji, ... Nano letters 4 (5), 867-870, 2004 | 280 | 2004 |
| A non-doped phosphorescent organic light-emitting device with above 31% external quantum efficiency. Q Wang, IW Oswald, X Yang, G Zhou, H Jia, Q Qiao, Y Chen, ... Advanced Materials (Deerfield Beach, Fla.) 26 (48), 8107-8113, 2014 | 167 | 2014 |
| FED up with fat tubes BR Chalamala, Y Wei, BE Gnade IEEE Spectrum 35 (4), 42-51, 1998 | 167 | 1998 |
| Exfoliated and intercalated polyamide-imide nanocomposites with montmorillonite A Ranade, NA D'Souza, B Gnade Polymer 43 (13), 3759-3766, 2002 | 163 | 2002 |
| Self-assembled monolayer coating for micro-mechanical devices RM Wallace, DA Webb, BE Gnade US Patent 5,523,878, 1996 | 155 | 1996 |
| Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices S Govindarajan, TS Böscke, P Sivasubramani, PD Kirsch, BH Lee, ... Applied Physics Letters 91 (6), 2007 | 151 | 2007 |
| Optimization of poly (vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics D Mao, MA Quevedo-Lopez, H Stiegler, BE Gnade, HN Alshareef Organic Electronics 11 (5), 925-932, 2010 | 149 | 2010 |
| Method of making a semiconductor device using a low dielectric constant material BE Gnade, CC Cho, DM Smith US Patent 5,470,802, 1995 | 146 | 1995 |
| Directed effusive beam atomic layer epitaxy system and method RM Wallace, BE Gnade US Patent 5,316,793, 1994 | 144 | 1994 |
| Method for fabricating a DMD spatial light modulator with a hardened hinge DA Webb, B Gnade US Patent 5,504,614, 1996 | 130 | 1996 |
| Method of making an interconnect structure with an integrated low density dielectric RH Havemann, S Jeng, BE Gnade, CC Cho US Patent 5,488,015, 1996 | 128 | 1996 |
| High-Dielectric-Constant Material Electrodes Comprising Thin Platinum Layers BEG S.R. Summerfelt, H.R. Beratan, P.S. Kirlin US Patent 5,566,045, 1996 | 122* | 1996 |
| Ferroelectric properties and polarization switching kinetic of poly (vinylidene fluoride-trifluoroethylene) copolymer D Mao, BE Gnade, MA Quevedo-Lopez Ferroelectrics-physical effects 23, 2011 | 118 | 2011 |
| Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films BR Chalamala, Y Wei, RH Reuss, S Aggarwal, BE Gnade, R Ramesh, ... Applied physics letters 74 (10), 1394-1396, 1999 | 117 | 1999 |
| Exciton and Polaron Quenching in Doping‐Free Phosphorescent Organic Light‐Emitting Diodes from a Pt (II)‐Based Fast Phosphor Q Wang, IWH Oswald, MR Perez, H Jia, BE Gnade, MA Omary Advanced Functional Materials 23 (43), 5420-5428, 2013 | 105 | 2013 |
| The effect of low temperature annealing on defects, impurities, and electrical properties of (Hg, Cd) Te HF Schaake, JH Tregilgas, JD Beck, MA Kinch, BE Gnade Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (1 …, 1985 | 101 | 1985 |
