| Germanane: A low effective mass and high bandgap 2-D channel material for future FETs RK Ghosh, M Brahma, S Mahapatra IEEE Transactions on Electron Devices 61 (7), 2309-2315, 2014 | 51 | 2014 |
| Scalability assessment of Group-IV mono-chalcogenide based tunnel FET M Brahma, A Kabiraj, D Saha, S Mahapatra Scientific Reports 8 (1), 5993, 2018 | 34 | 2018 |
| The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials M Brahma, ML Van de Put, E Chen, MV Fischetti, WG Vandenberghe npj 2D Materials and Applications 7 (1), 14, 2023 | 20 | 2023 |
| Phonon limited anisotropic quantum transport in phosphorene field effect transistors M Brahma, A Kabiraj, M Bescond, S Mahapatra Journal of Applied Physics 126 (11), 2019 | 13 | 2019 |
| Germanane MOSFET for Subdeca nanometer high-performance technology nodes M Brahma, M Bescond, D Logoteta, R krishna Ghosh, S Mahapatra IEEE Transactions on Electron Devices 65 (3), 1198-1204, 2018 | 6 | 2018 |
| Modeling contact resistivity in monolayer molybdenum disulfide edge contacts M Brahma, ML Van de Put, E Chen, MV Fischetti, WG Vandenberghe 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 5 | 2021 |
| Contacts to two-dimensional materials: Image forces, dielectric environment, and back-gate M Brahma, ML Van de Put, E Chen, MV Fischetti, WG Vandenberghe 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 3 | 2022 |
| Role of electrostatic doping on the resistance of metal and two-dimensional materials edge contacts M Brahma, ML Van de Put, E Chen, MV Fischetti, WG Vandenberghe Physical Review Research 6 (3), 033278, 2024 | 2 | 2024 |
| Insights on anisotropic dissipative quantum transport in n-type phosphorene MOSFET M Brahma, A Kabiraj, S Mahapatra 2019 32nd International Conference on VLSI Design and 2019 18th …, 2019 | 2 | 2019 |
| Modeling the channel potential and threshold voltage of a fully depleted Double Gate Junctionless FET P Gupta, D Burman, J Das, M Brahma, H Rahaman, P Dasgupta 2012 International Conference on Communications, Devices and Intelligent …, 2012 | 2 | 2012 |
| Contact Resistance in Monolayer MoS2 Edge-Contacts:“Electrostatic” vs. Substitutional Doping M Brahma, ML van de Put, E Chen, MV Fischetti, WG Vandenberghe 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | 1 | 2024 |
| Analytical study of the effect of asymmetric gate bias on the performance of double gate TFET P Gupta, J Das, D Burman, M Brahma, H Rahaman, P Dasgupta 2012 International Conference on Communications, Devices and Intelligent …, 2012 | | 2012 |
| Performance analysis and simulation study of a Sandwiched Barrier Tunnel FET PS Gupta, M Brahma, J Das, D Burman, H Rahaman, PS Dasgupta 2012 International Conference on Communications, Devices and Intelligent …, 2012 | | 2012 |
