| Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics G Namkoong, WA Doolittle, AS Brown, M Losurdo, P Capezzuto, G Bruno Journal of applied physics 91 (4), 2499-2507, 2002 | 114 | 2002 |
| InN: A material with photovoltaic promise and challenges E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ... Journal of Crystal Growth 288 (2), 218-224, 2006 | 110 | 2006 |
| Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look Applied Physics Letters 93 (17), 2008 | 104 | 2008 |
| Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Z Cheng, YR Koh, H Ahmad, R Hu, J Shi, ME Liao, Y Wang, T Bai, R Li, ... Communications Physics 3 (1), 115, 2020 | 89 | 2020 |
| Substantial P‐type conductivity of AlN achieved via beryllium doping H Ahmad, J Lindemuth, Z Engel, CM Matthews, TM McCrone, ... Advanced Materials 33 (42), 2104497, 2021 | 87 | 2021 |
| GaN betavoltaic energy converters C Honsberg, WA Doolittle, M Allen, C Wang Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005 | 85 | 2005 |
| Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy SD Burnham, G Namkoong, DC Look, B Clafin, WA Doolittle Journal of Applied Physics 104 (2), 2008 | 80 | 2008 |
| Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap M Moseley, J Lowder, D Billingsley, WA Doolittle Applied Physics Letters 97 (19), 2010 | 79 | 2010 |
| Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis WA Doolittle, CM Matthews, H Ahmad, K Motoki, S Lee, A Ghosh, ... Applied Physics Letters 123 (7), 2023 | 78 | 2023 |
| Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ... Journal of Applied Physics 117 (4), 2015 | 78 | 2015 |
| Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers M Losurdo, P Capezzuto, G Bruno, G Namkoong, WA Doolittle, AS Brown Journal of applied physics 91 (4), 2508-2518, 2002 | 75 | 2002 |
| Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells CAM Fabien, WA Doolittle Solar Energy Materials and Solar Cells 130, 354-363, 2014 | 71 | 2014 |
| Energetics of Mg incorporation at GaN(0001) and surfaces Q Sun, A Selloni, TH Myers, WA Doolittle Physical Review B—Condensed Matter and Materials Physics 73 (15), 155337, 2006 | 71 | 2006 |
| Realization of homojunction PN AlN diodes H Ahmad, Z Engel, CM Matthews, S Lee, WA Doolittle Journal of Applied Physics 131 (17), 2022 | 69 | 2022 |
| Transient atomic behavior and surface kinetics of GaN M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle Journal of Applied Physics 106 (1), 2009 | 67 | 2009 |
| Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle Applied Physics Letters 103 (13), 2013 | 64 | 2013 |
| Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ... Journal of Crystal Growth 425, 115-118, 2015 | 62 | 2015 |
| Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization SD Burnham, G Namkoong, KK Lee, WA Doolittle Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 61 | 2007 |
| Oxygen adsorption and incorporation at irradiated and surfaces: First-principles density-functional calculations Q Sun, A Selloni, TH Myers, WA Doolittle Physical Review B—Condensed Matter and Materials Physics 74 (19), 195317, 2006 | 60 | 2006 |
| Thermal boundary conductance across epitaxial metal/sapphire interfaces YR Koh, J Shi, B Wang, R Hu, H Ahmad, S Kerdsongpanya, E Milosevic, ... Physical Review B 102 (20), 2020 | 55 | 2020 |
Jordan GreenleeMicron TechnologyVerified email at gatech.edu
Jordan GreenleeMicron TechnologyVerified email at gatech.edu