| The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017 | 431 | 2017 |
| Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016 | 304 | 2016 |
| The potential of III‐V semiconductors as terrestrial photovoltaic devices M Bosi, C Pelosi Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007 | 290 | 2007 |
| Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016 | 223 | 2016 |
| Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review M Bosi RSC Advances 5 (92), 75500-75518, 2015 | 188 | 2015 |
| Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ... Applied Surface Science 515, 146033, 2020 | 184 | 2020 |
| Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari Journal of Materials Chemistry C 8 (32), 10975-10992, 2020 | 170 | 2020 |
| Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 155 | 2017 |
| Germanium: Epitaxy and its applications M Bosi, G Attolini Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010 | 152 | 2010 |
| ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 150 | 2018 |
| Review on atomic layer deposition and applications of oxide thin films JS Ponraj, G Attolini, M Bosi Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013 | 150 | 2013 |
| In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3 I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz Acta Materialia 183, 216-227, 2020 | 103 | 2020 |
| Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ... Applied Physics Letters 108 (2), 2016 | 89 | 2016 |
| The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019 | 87 | 2019 |
| A study of Indium incorporation efficiency in InGaN grown by MOVPE M Bosi, R Fornari Journal of Crystal Growth 265 (3-4), 434-439, 2004 | 82 | 2004 |
| Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ... Journal of Crystal Growth 534, 125511, 2020 | 67 | 2020 |
| Si and Sn doping of ε-Ga2O3 layers A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ... APL Materials 7 (3), 2019 | 64 | 2019 |
| A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes L Seravalli, M Bosi Materials 14 (24), 7590, 2021 | 62 | 2021 |
| Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and … I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ... The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021 | 57 | 2021 |
| Probing the nanoscale light emission properties of a CVD-grown MoS 2 monolayer by tip-enhanced photoluminescence Y Okuno, O Lancry, A Tempez, C Cairone, M Bosi, F Fabbri, M Chaigneau Nanoscale 10 (29), 14055-14059, 2018 | 57 | 2018 |
Roberto FornariProfessor of Physics, University of Parma, ItalyVerified email at unipr.it
