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George Simion
George Simion
Verified email at imec.be
Title
Cited by
Cited by
Year
Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators
J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ...
Physical Review Applied 16 (1), 014018, 2021
1252021
Friedel oscillations in a Fermi liquid
GE Simion, GF Giuliani
Physics Research Publications, 235, 2005
652005
Low charge noise quantum dots with industrial CMOS manufacturing
A Elsayed, MMK Shehata, C Godfrin, S Kubicek, S Massar, Y Canvel, ...
npj Quantum Information 10 (1), 70, 2024
632024
A flexible 300 mm integrated Si MOS platform for electron-and hole-spin qubits exploration
R Li, NID Stuyck, S Kubicek, J Jussot, BT Chan, FA Mohiyaddin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2020
542020
Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
MMEK Shehata, G Simion, R Li, FA Mohiyaddin, D Wan, M Mongillo, ...
Physical Review B 108 (4), 045305, 2023
492023
Uniform spin qubit devices with tunable coupling in an all-silicon 300 mm integrated process
NID Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ...
2021 Symposium on VLSI circuits, 1-2, 2021
322021
Spin phase diagram of the composite fermion liquid
A Wójs, G Simion, JJ Quinn
Physical Review B—Condensed Matter and Materials Physics 75 (15), 155318, 2007
302007
Formation of helical domain walls in the fractional quantum Hall regime as a step toward realization of high-order non-Abelian excitations
T Wu, Z Wan, A Kazakov, Y Wang, G Simion, J Liang, KW West, K Baldwin, ...
Physical Review B 97 (24), 245304, 2018
292018
An integrated silicon MOS single-electron transistor charge sensor for spin-based quantum information processing
ND Stuyck, R Li, S Kubicek, FA Mohiyaddin, J Jussot, BT Chan, G Simion, ...
IEEE Electron Device Letters 41 (8), 1253-1256, 2020
272020
Multiphysics simulation & design of silicon quantum dot qubit devices
FA Mohiyaddin, G Simion, NID Stuyck, R Li, F Ciubotaru, G Eneman, ...
2019 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2019
272019
Many-body local fields theory of quasiparticle properties in a three-dimensional electron liquid
GE Simion, GF Giuliani
Physical Review B—Condensed Matter and Materials Physics 77 (3), 035131, 2008
262008
Magnetic field spectral crossings of Luttinger holes in quantum wells
GE Simion, YB Lyanda-Geller
Physical Review B 90 (19), 195410, 2014
252014
The hierarchy of incompressible fractional quantum Hall states
JJ Quinn, A Wójs, KS Yi, G Simion
Physics reports 481 (3-4), 29-81, 2009
242009
Mesoscopic transport in electrostatically-defined spin-full channels in quantum Hall ferromagnets
A Kazakov, G Simion, Y Lyanda-Geller, V Kolkovsky, Z Adamus, ...
arXiv preprint arXiv:1702.03279, 2017
232017
Parafermions, induced edge states, and domain walls in fractional quantum Hall effect spin transitions
J Liang, G Simion, Y Lyanda-Geller
Physical Review B 100 (7), 075155, 2019
212019
Impurity-generated non-Abelions
G Simion, A Kazakov, LP Rokhinson, T Wojtowicz, YB Lyanda-Geller
Physical Review B 97 (24), 245107, 2018
162018
Electrostatic control of quantum Hall ferromagnetic transition: A step toward reconfigurable network of helical channels
A Kazakov, G Simion, Y Lyanda-Geller, V Kolkovsky, Z Adamus, ...
Physical Review B 94 (7), 075309, 2016
162016
Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium
T Koch, C Godfrin, V Adam, J Ferrero, D Schroller, N Glaeser, S Kubicek, ...
npj Quantum Information 11 (1), 59, 2025
152025
Fractional quantum hall effect and electron correlations in partially filled first excited Landau level
GE Simion, JJ Quinn
Physica E: Low-dimensional Systems and Nanostructures 41 (1), 1-5, 2008
142008
Comprehensive 300 mm process for silicon spin qubits with modular integration
A Elsayed, C Godfrin, NID Stuyck, MMK Shehata, S Kubicek, S Massar, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
112023
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