| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 757 | 2019 |
| Reliability wearout mechanisms in advanced CMOS technologies AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ... John Wiley & Sons, 2009 | 300 | 2009 |
| Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability EY Wu, J Suné Microelectronics reliability 45 (12), 1809-1834, 2005 | 201 | 2005 |
| On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques EY Wu, RP Vollertsen IEEE Transactions on Electron Devices 49 (12), 2131-2140, 2003 | 183 | 2003 |
| Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides E Wu, J Sune, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon Solid-State Electronics 46 (11), 1787-1798, 2002 | 176 | 2002 |
| IEEE Trans. Magn. EY Wu, JV Peske, DC Palmer IEEE Trans. Magn 30 (6), 4254-4256, 1994 | 171 | 1994 |
| Ultra-thin oxide reliability for ULSI applications EY Wu, JH Stathis, LK Han Semiconductor Science and Technology 15 (5), 425, 2000 | 151 | 2000 |
| Experimental evidence of T/sub BD/power-law for voltage dependence of oxide breakdown in ultrathin gate oxides EY Wu, A Vayshenker, E Nowak, J Sune, RP Vollertsen, W Lai, D Harmon IEEE Transactions on Electron Devices 49 (12), 2244-2253, 2003 | 145 | 2003 |
| Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ... Applied Physics Letters 108 (1), 2016 | 136 | 2016 |
| Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides EY Wu, J Aitken, E Nowak, A Vayshenker, P Varekamp, G Hueckel, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 132 | 2000 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 131 | 2011 |
| Challenges for accurate reliability projections in the ultra-thin oxide regime EY Wu, WW Abadeer, LK Han, SH Lo, GR Hueckel 1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999 | 131 | 1999 |
| CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics EY Wu, EJ Nowak, A Vayshenker, WL Lai, DL Harmon IBM Journal of Research and Development 46 (2.3), 287-298, 2002 | 120 | 2002 |
| On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress … EY Wu, J Suñé, W Lai IEEE Transactions on Electron Devices 49 (12), 2141-2150, 2003 | 113 | 2003 |
| Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and device failure E Wu, E Nowak, J Aitken, W Abadeer, LK Han, S Lo International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 98 | 1998 |
| Hydrogen-Release Mechanisms in the Breakdown of Thin Films J Suñé, EY Wu Physical review letters 92 (8), 087601, 2004 | 92 | 2004 |
| Gate oxide breakdown under current limited constant voltage stress BP Linder, JH Stathis, RA Wachnik, E Wu, SA Cohen, A Ray, ... 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 92 | 2000 |
| Facts and myths of dielectric breakdown processes—Part I: Statistics, experimental, and physical acceleration models EY Wu IEEE Transactions on Electron Devices 66 (11), 4523-4534, 2019 | 89 | 2019 |
| Weibull breakdown characteristics and oxide thickness uniformity EY Wu, EJ Nowak, RP Vollertsen, LK Han IEEE Transactions on Electron Devices 47 (12), 2301-2309, 2002 | 82 | 2002 |
| IEEE EDL E Wu IEEE EDL 21 (7), 341-343, 2000 | 80 | 2000 |
