| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 357 | 2022 |
| Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020 | 158 | 2020 |
| A comprehensive model for ferroelectric FET capturing the key behaviors: Scalability, variation, stochasticity, and accumulation S Deng, G Yin, W Chakraborty, S Dutta, S Datta, X Li, K Ni 2020 IEEE symposium on VLSI technology, 1-2, 2020 | 120 | 2020 |
| Double-gate W-doped amorphous indium oxide transistors for monolithic 3D capacitorless gain cell eDRAM H Ye, J Gomez, W Chakraborty, S Spetalnick, S Dutta, K Ni, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.3. 1-28.3. 4, 2020 | 108 | 2020 |
| Programmable coupled oscillators for synchronized locomotion S Dutta, A Parihar, A Khanna, J Gomez, W Chakraborty, M Jerry, B Grisafe, ... Nature communications 10 (1), 3299, 2019 | 104 | 2019 |
| Toward attojoule switching energy in logic transistors S Datta, W Chakraborty, M Radosavljevic Science 378 (6621), 733-740, 2022 | 101 | 2022 |
| Fundamental understanding and control of device-to-device variation in deeply scaled ferroelectric FETs K Ni, W Chakraborty, J Smith, B Grisafe, S Datta 2019 Symposium on VLSI Technology, T40-T41, 2019 | 100 | 2019 |
| Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020 | 92 | 2020 |
| Design and analysis of an ultra-dense, low-leakage, and fast FeFET-based random access memory array D Reis, K Ni, W Chakraborty, X Yin, M Trentzsch, SD Dünkel, T Melde, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5 …, 2019 | 89 | 2019 |
| BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109 W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 83 | 2020 |
| Examination of the interplay between polarization switching and charge trapping in ferroelectric FET S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020 | 74 | 2020 |
| In-memory computing primitive for sensor data fusion in 28 nm HKMG FeFET technology K Ni, B Grisafe, W Chakraborty, AK Saha, S Dutta, M Jerry, JA Smith, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2018 | 69 | 2018 |
| Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ... 2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019 | 65 | 2019 |
| Characterization and modeling of 22 nm FDSOI cryogenic RF CMOS W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 …, 2021 | 46 | 2021 |
| Biologically plausible ferroelectric quasi-leaky integrate and fire neuron S Dutta, A Saha, P Panda, W Chakraborty, J Gomez, A Khanna, S Gupta, ... 2019 Symposium on VLSI Technology, T140-T141, 2019 | 39 | 2019 |
| Benchmarking monolithic 3D integration for compute-in-memory accelerators: overcoming ADC bottlenecks and maintaining scalability to 7nm or beyond X Peng, W Chakraborty, A Kaul, W Shim, MS Bakir, S Datta, S Yu 2020 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2020 | 34 | 2020 |
| An empirically validated virtual source FET model for deeply scaled cool CMOS W Chakraborty, K Ni, J Smith, A Raychowdhury, S Datta 2019 IEEE International Electron Devices Meeting (IEDM), 39.4. 1-39.4. 4, 2019 | 27 | 2019 |
| Silicon RibbonFET CMOS at 6nm Gate Length A Agrawal, W Chakraborty, W Li, H Ryu, B Markman, SH Hoon, RK Paul, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | 26 | 2024 |
| IEEE Int. Electron Devices Meeting (IEDM) X Peng, W Chakraborty, A Kaul, W Shim, MS Bakir, S Datta, S Yu IEEE, Piscataway, NJ, 2020 | 25 | 2020 |
| Cryogenic RF CMOS on 22nm FDSOI Platform with Record fT=495GHz and fMAX=497GHz W Chakraborty, KA Aabrar, J Gomez, R Saligram, A Raychowdhury, P Fay, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 22 | 2021 |
Suman DattaJoseph M. Pettit Chair ProfessorVerified email at gatech.edu
